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We have developed a measurement system based on a correlation method to characterize the nonlinearity response of silicon photodiodes to pulsed-laser radiation
In earlier papers, NIST proposed a standard illumination source and optical filter targets to with which to assess the state-of-the-art of display measurement
We review the goals, accomplishments, and directions of the Society for Automotive Engineers (SAE) J1757 Vehicular Flat Panel Display Metrology Committee. The
The Optical Technology Division at the National Institute of Standards and Technology (NIST) developed a reference instrument for measuring the surface color of
Nhan Van Nguyen, James E. Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel
The crystalline quality of bonded Silicon-On-Insulator (SOI) wafers were examined by spectroscopic ellipsometry and Raman spectroscopy. Both techniques detect
Stephen B. Balakirsky, Christopher J. Scrapper Jr, Elena R. Messina
This paper will describe how the Mobility Open Architecture Tools and Simulation (MOAST) framework can facilitate performance evaluations of RCS compliant multi
Two different methods used to determine the size of polystyrene spheres were found to disagree by about 5 %. One of the methods, differential mobility analysis
In order to develop multi-pixel focal plane arrays at terahertz frequencies based on HEB technology, special consideration must be given to the power coupling
Balasubramanian Muralikrishnan, Jack A. Stone Jr., John R. Stoup
The focus of this paper is on the metrology of microstructures. Traditional Coordinate Measuring Machines (CMM) are limited to measuring holes of 300 m
Recent improvements for mid-level laser power measurements (1 μW to 1 W) have increased the range of calibrations available to customers of our CW laser power
Margaret C. Kline, David L. Duewer, Janette W. Redman, John M. Butler
For optimal DNA Short Tandem Repeat (STR) typing results, the DNA concentration ([DNA]) of the sample must be accurately determined prior to the polymerase
Richard M. Silver, Ravikiran Attota, Michael T. Stocker, M R. Bishop, Lowell P. Howard, Thomas A. Germer, Egon Marx, M P. Davidson, Robert D. Larrabee
Recent advances in optical imaging techniques have unveiled new possibilities for optical metrology and optical-based process control measurements of features
We examine the performance of multimodal biometric authentication systems using state-of-the-art Commercial Off-the-Shelf (COTS) fingerprint and face biometric
A new method for identifying structural defect-induced vibration signals was developed based on the analytic wavelet transform. The advantage of this method is
Robert W. Ivester, Eric P. Whitenton, Laurent Deshayes
This paper compares experimental measurements and model-based simulations of cutting temperature, force, and chip thickness for machining of aluminum. Cutting
Bala Muralikrishnan, Jack A. Stone Jr., John R. Stoup
This presentation focuses on three aspects of micro-feature metrology novel applications that drive research and commercialization, capabilities and limitations
We expand a previous result of Dean[Dea99] to provide a second preimage attack on all n-bit iterated hash functions with Damgard-Merkle strengthening and n-bit
Chong Xu, Satyandra K. Gupta, Z Yao, Michael Gruninger, Ram D. Sriram
In multiple interaction-state mechatronic devices the interactions between elements of use-environment and elements of the device can have different qualitative
Line width roughness (LWR) is usually estimated simply as three standard deviations of the line width. The effect of image noise upon this metric includes a
Simulation technology holds tremendous promise for the manufacturing industry. A machine shop data model has been developed at the National Institute of
Manas Bajaj, Dirk Zwemer, Russell Peak, Mike Dickerson, Thomas Thurman, Kevin G. Brady, John V. Messina
The realm of electronics product realization is marked by an extremely fast-paced market, stringent demands for product reliability and high importance to
The fluorescence intermittency of single, bare, CdSe/ZnS quantum dots were probed using single molecule confocal microscopy and found to demonstrate power law
Stephen B. Balakirsky, Christopher J. Scrapper Jr, Elena R. Messina
This paper will describe the Mobility Open Architecture Tools and Simulation (MOAST) environment. This environment conforms to the NIST 4D/RCS architecture [3]
Baozhong Zhu, John S. Suehle, Eric M. Vogel, Joseph B. Berstein
NBTI of HfO2 and SiO2 devices are studied and compared. The pulsed stress frequency responses of DVth and acceleration parameters are quite different for them
Richard A. Allen, Amy Hunt, Christine E. Murabito, Brandon Park, William F. Guthrie, Michael W. Cresswell
NIST has an ongoing effort to provide the semiconductor industry with critical dimension CD reference materials, using the silicon (111) lattice spacing as a
Michael W. Cresswell, Brandon Park, Richard A. Allen, William F. Guthrie, Ronald G. Dixson, Wei Tan, Christine E. Murabito
CD measurements have been extracted from SEM and HRTEM images of the same set of monocrystalline silicon features having linewidths between 40 and 200 nm. The
This presentation will focus on the development and application of novel high-throughput platforms for both adhesion and mechanical property testing. For