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Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy

Published

Author(s)

Nhan Van Nguyen, James E. Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel

Abstract

The crystalline quality of bonded Silicon-On-Insulator (SOI) wafers were examined by spectroscopic ellipsometry and Raman spectroscopy. Both techniques detect slight structural defects in the SOI layer. If a pure crystalline silicon dielectric function is assumed for the SOI layer, the spectroscopic ellipsometry data fitting yields an unacceptably large discrepancy between the experimental and modeled data. The best fits for all the samples result in a dielectric function of the SOI layer that consists of a physical mixture of crystalline silicon and about 4 % to 7 % of amorphous silicon. Using such a mixture indicates that there are still some defects in the SOI layer when compared with the high-quality bulk crystalline silicon. This observation is further supported by Raman spectroscopy measurements. The Raman spectra of all SOI samples exhibit a feature at about 495 cm 1 that is not observed in the crystalline silicon spectrum. Features similar to the 495 cm 1 feature have been reported in the literature and attributed to dislocations or faults in the silicon lattice.
Proceedings Title
High -Mobility Group -IV Materials and Devices, MRS Proceedings
Conference Dates
April 12-16, 2004
Conference Location
San Francisco, CA, USA
Conference Title
2004 MRS Spring Meeting

Keywords

Raman Spectroscopy, Silicon-On-Insulator, Spectroscopic ellipsometry

Citation

Nguyen, N. , Maslar, J. , Kim, J. , Han, J. , Park, J. , Chandler-Horowitz, D. and Vogel, E. (2005), Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy, High -Mobility Group -IV Materials and Devices, MRS Proceedings, San Francisco, CA, USA (Accessed June 25, 2024)

Issues

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Created May 8, 2005, Updated October 12, 2021