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The Contribution of HfO2 Bulk Oxide Traps to Dynamic NBTI in pMOSFETs

Published

Author(s)

Baozhong Zhu, John S. Suehle, Eric M. Vogel, Joseph B. Berstein

Abstract

NBTI of HfO2 and SiO2 devices are studied and compared. The pulsed stress frequency responses of DVth and acceleration parameters are quite different for them. Bulk traps in the HfO2 film are used to explain these differences. Furthermore, caution must be taken when extrapolating the device lifetime of HfO2 devices.
Proceedings Title
IEEE International Reliability Physics Symposium Proceedings
Conference Dates
April 17-21, 2005
Conference Location
San Jose, CA, USA
Conference Title
International Reliability Physics Symposium

Keywords

bulk oxide traps, Hafnium oxide, high-k gate dielectrics, negative bias temperature instability

Citation

Zhu, B. , Suehle, J. , Vogel, E. and Berstein, J. (2005), The Contribution of HfO2 Bulk Oxide Traps to Dynamic NBTI in pMOSFETs, IEEE International Reliability Physics Symposium Proceedings, San Jose, CA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31914 (Accessed February 21, 2024)
Created April 19, 2005, Updated October 12, 2021