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Nonlinearity of Response of Silicon Photodiodes at 193 nm

Published

Author(s)

Shao Yang, Darryl A. Keenan, Marla L. Dowell

Abstract

We have developed a measurement system based on a correlation method to characterize the nonlinearity response of silicon photodiodes to pulsed-laser radiation at 193 nm. The method compares the pulse response of the device under test with that of a transfer standard whose response is linear over a limited energy range with reasonable uncertainty. Using a set of filters and proper data processing, the nonlinearity measurement spans several decades of photodiode output charge.
Conference Dates
May 11-13, 2005
Conference Location
Boulder, CO, USA
Conference Title
Council for Optical Radiation Measurements Conference

Keywords

detector, excimer laser, nonlinearity, photodiode

Citation

Yang, S. , Keenan, D. and Dowell, M. (2005), Nonlinearity of Response of Silicon Photodiodes at 193 nm, Council for Optical Radiation Measurements Conference, Boulder, CO, USA (Accessed June 13, 2024)

Issues

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Created May 10, 2005, Updated October 12, 2021