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Nonlinearity of Response of Silicon Photodiodes at 193 nm
Published
Author(s)
Shao Yang, Darryl A. Keenan, Marla L. Dowell
Abstract
We have developed a measurement system based on a correlation method to characterize the nonlinearity response of silicon photodiodes to pulsed-laser radiation at 193 nm. The method compares the pulse response of the device under test with that of a transfer standard whose response is linear over a limited energy range with reasonable uncertainty. Using a set of filters and proper data processing, the nonlinearity measurement spans several decades of photodiode output charge.
Conference Dates
May 11-13, 2005
Conference Location
Boulder, CO, USA
Conference Title
Council for Optical Radiation Measurements Conference
Pub Type
Conferences
Keywords
detector, excimer laser, nonlinearity, photodiode
Citation
Yang, S.
, Keenan, D.
and Dowell, M.
(2005),
Nonlinearity of Response of Silicon Photodiodes at 193 nm, Council for Optical Radiation Measurements Conference, Boulder, CO, USA
(Accessed December 2, 2023)