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PUBLICATIONS

Nonlinearity of Response of Silicon Photodiodes at 193 nm

Published

Author(s)

Shao Yang, Darryl A. Keenan, Marla L. Dowell

Abstract

We have developed a measurement system based on a correlation method to characterize the nonlinearity response of silicon photodiodes to pulsed-laser radiation at 193 nm. The method compares the pulse response of the device under test with that of a transfer standard whose response is linear over a limited energy range with reasonable uncertainty. Using a set of filters and proper data processing, the nonlinearity measurement spans several decades of photodiode output charge.
Conference Dates
May 11-13, 2005
Conference Location
Boulder, CO, USA
Conference Title
Council for Optical Radiation Measurements Conference
Pub Type
Conferences

Keywords

detector, excimer laser, nonlinearity, photodiode

Citation

Yang, S. , Keenan, D. and Dowell, M. (2005), Nonlinearity of Response of Silicon Photodiodes at 193 nm, Council for Optical Radiation Measurements Conference, Boulder, CO, USA (Accessed December 2, 2023)

Created May 10, 2005, Updated October 12, 2021