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Projects/Programs

Displaying 51 - 71 of 71

Prototyping Platforms for Emerging Technologies

Ongoing
Emerging technologies aim to overcome traditional memory limitations with higher density, lower power consumption, faster read/write speeds, better endurance, and lower cost [2]. Many new candidate memory elements are analog or stochastic, requiring new testing infrastructure, and the context of

Quantitative Nanoscale Imaging Through Artificial Intelligence

Ongoing
This project extends optical capabilities for the characterization of nanoscale devices as they increase in complexity, with challenging new materials properties, thicknesses, and length scales that challenge simplistic applications of the fundamental equations of electromagnetism. Critical

Quantum anomalous Hall effect Theory

Ongoing
The quantum anomalous Hall effect is a phenomenon in which certain magnetic insulators exhibit a zero-field Hall resistance value, 𝑅 𝐻, that is precisely quantized in terms of fundamental constants of nature: 𝑅 𝐻 = ℎ/𝑛𝑒 2, where ℎ is Planck's constant, 𝑒 is the charge of the electron and 𝑛 is a

Quantum Transport Measurements

Ongoing
It is necessary to isolate, control, and understand the fundamental physics of exotic states of matter to create nanoengineered systems with the requisite quantum properties for quantum information systems and advanced computing applications. We develop measurement capabilities and design test

Sequential Bayesian Experiment Design

Completed
We develop and publish the optbayesexpt python package. The package implements sequential Bayesian experiment design to control laboratory experiments for efficient measurements. The package is designed for measurements with: an experiment (possibly computational) that yields measurements and

Si-Based Single Spin/Single Photon Measurement, Coherence and Manipulation

Ongoing
Devices based on moving and controlling single electrons offer the tantalizing possibility of achieving quantum information processing by virtue of their spin or charge coherent properties. We are pursuing CMOS-compatible Si-based quantum dots for a variety of goals, including:” Narrowband high-MHz

Silicon-based single electron current standards

Ongoing
Our devices can manipulate and trap a single electron in a quantum dot through the application of voltages to electrostatically controlled tunnel barriers. By cycling these voltages appropriately, we are able to sequentially pump one electron at a time through the device. To produce a current

Silicon-based Solid-State Analog Quantum Simulators

Ongoing
Why Atom-based Si AQS Analog quantum simulators are designed quantum systems with a tunable Hamiltonian to emulate complex quantum systems intractable using classical computers due to the exponential growth of the calculations with system size. Simulating strongly interacting fermions (electrons) on

Spin-orbit interaction in devices and quantum materials

Ongoing
The spin degree of freedom can provide a basis for next-generation electronic devices. Spintronic devices typically include materials with magnetic ordering, such as ferromagnets or antiferromagnets. The state of the magnetization influences charge and spin current through an effect known as

Spintronics for Neuromorphic Computing

Ongoing
Magnetic tunnel junctions (see Fig. 1) consist of two thin films of ferromagnetic material separated by a few atomic layers of an insulating material. The insulator is so thin that electrons can tunnel quantum mechanically through it. The rate at which the electrons tunnel is affected by the

Structure, Defects, and Scattering in Graphene

Completed
The graphene honeycomb lattice is a key element in determining many of graphene's spectacular properties, which are desirable for a host of electronic applications. The graphene 6-fold symmetric lattice gives rise to charge carriers behaving like light-waves having zero mass. The charge carriers in

Temporal Computing

Ongoing
In standard integrated circuits, information that is coded as ones and zeros is implemented by voltages on wires being high or low. The circuits consume energy during transitions between these voltages. Binary numbers have a voltage per bit so there are a lot of transitions each time a number

Theory: Designing the Nanoworld

Ongoing
Developing and exploiting nanodevices for quantum and nanotechnologies requires nanoscale and atomic scale modeling of ultrasmall structures, devices, their operation, and their response to probes. Key challenges of understanding physics at the quantum/classical interface and measurement at the

Theory and Modeling of Materials for Renewable Energy

Completed
Nanostructured materials offer potential benefits for a range of renewable energy applications that rely critically on interfaces for separating charges, including photovoltaics, thermoelectrics, and electrochemical energy storage. The use of nanostructures allows scientists and engineers to

Theory of Spin-Orbit Torque

Completed
A ferromagnetic material such as iron acquires its magnetization because the magnetic orientation of its constituent atoms all line up in the same way. Because individual electrons also have an intrinsic magnetic moment – which is often referred to as the electron “spin” - they can interact with

Thin Film Electronics (Archived)

Completed
Today's electronics have reached a point where sheer computation power has yielded to combined form and function as the key driver of large consumer markets. The demand for portable and pervasive electronics with greater functionality promises significant changes over the next decades in how society

Topological Insulators

Ongoing
Dichalcogenide-Based Topological Insulators A family of TI materials can by synthesized by combining binary compounds of Bismuth (Bi) or Antimony (Sb) with Selenium (Se) and Tellurium (Te) to form Bi 2Se 3, Bi 2Te 3, and Sb 2Te 3 compounds. In these material compounds, the spin of the electron has a

Ultrafast Spectroscopy to Advance Microelectronics

Ongoing
Continued advancement in microelectronics, including analog and digital electronics, power electronics, optics and photonics, and micromechanics for memory, processing, sensing, and communications as defined by the OSTP “National Strategy on Microelectronics Research,” requires knowledge of material
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