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Physical Measurement Laboratory

Nanoscale Device Characterization Division

Projects/Programs

Displaying 26 - 50 of 81
STM image of a 28-Si film deposited onto a Si/100 substrate

Enriched Silicon and Devices for Quantum Information

Ongoing
Enriching silicon from 5% to <1 ppm 29Si Groundbreaking work around the world has realized qubits in silicon using metal-oxide-semiconductor (MOS) devices, single atomic dopants/defects and SiGe heterostructures, and, in all cases, the qubit coherence and fidelity properties are improved when using...
Harnessing EUV capabilities for non-destructive metrology

EUV Scatterometry

Ongoing
To measure and inspect the smallest printed features on an IC chip, researchers and manufacturers use a combination of electron scanning modalities (i.e., transmission electron and scanning electron microscopies) and an optical method, scatterometry. Industrially, the most common modality for...
Organic light emitting diode, light output is modulated through magnetic control of exciton states

Exciton and Charge Transport Dynamics in Organic Semiconductors

Ongoing
Our approach toward establishing connections between the application space and physical phenomena includes developing electrical/optical devices and measurements that can be used for physical measurement, physical measurements that can be applied to real devices, and device design that can be tuned...
Diagram showing our multidimensional spectroscopy experiment.

Femtosecond Nonlinear Optical Spectroscopy of Nanoscale Materials

Ongoing
The purpose of this project is to develop and refine spectroscopic techniques based on nonlinear optics for the study of novel materials. Measurements that isolate the nonlinear response are often better able to uncover physical processes that, in the linear response, are subtle and hard to isolate...

Graphene

Ongoing
Two remarkable features of graphene that are opening avenues to multiple applications are its high transport carrier mobility and the broad tunability of its electronic properties. Graphene charge carriers can be tuned continuously from negative carriers (i.e., electrons) to positive carriers (holes...
Microscope image of a crossbar array

Hardware Accelerators for Neural Networks

Ongoing
One promising candidate for building a hardware accelerator comes from the field of spintronics, where information is carried by electronic spin rather than charge. Magnetic tunnel junctions are particularly suited because of their multifunctionality and compatibility with standard integrated...
Temporal Chip

Hardware Accelerators for Statistical Computing

Ongoing
Finding good solutions to many hard problems, like combinatorial optimization and traveling salesman problems, counterintuitively requires making the estimated solution worse before making it better. This situation results from many hard problems having many “solutions” that cannot be improved...

High Temperature Hall Effect Measurements

Ongoing
Customized Hall effect measurement apparatus which supports measures of Hall effect mobility and resistivity of semiconducting films across a wide range of temperatures (77K-825K).
Project Graphene TMCO

Integer and Fractional Quantum Hall Effect

Ongoing
Integer Quantum Hall Effect Graphene is a unique 2DEG system that is exposed at the surface and can be probed with scanning tunneling measurements.  A hallmark of graphene that results from the unique linear dispersion is that the energy spacing between the Landau levels is not constant but varies...
Small array of transistors designed for single device integration.

Integrated CMOS Testbeds for Nanoelectronics and Machine Learning

Ongoing
The increasingly complex device requirements for next-generation computing architectures such as neuromorphic computing or nanoelectronic machine learning accelerators present challenges for researchers across the spectrum of institutions, from small businesses and universities to government...
Crossbar Memory Arrays

Integrated Testbeds for Advanced Metrology

Ongoing
Crossbar Memory Arrays An especially prolific structure in memory architectures aimed at accelerating neural network operation is the crossbar array (Fig. 1). We produce medium-scale arrays that hold up to 20,000 nanodevices which can be characterized, read from, and written to individually or in...
Custom-built wafer level probes in position to perform EDMR measurements on fully processed transistors.

Magnetic Resonance Spectroscopy

Ongoing
Custom-built wafer level probes in position to perform EDMR measurements on fully processed transistors. Electronics are all around us and have completely reinvented nearly every aspect of our society. Virtually any system, large or small, contains some type of electronics that may or may not be...
Prototype cryogenic atomic force microscope system with nanoscale electron spin resonance capability

Manipulation and Imaging of Dilute Densities of Electron Spins

Completed
While the characteristics of the unpaired electrons which are trapped in these bonding errors have a dramatic impact on the macroscale material properties, observing these same unpaired electrons has proven quite difficult. These unpaired electrons are transient in time, temperature, and pressure...
Schematic diagram of a 3D stacked integrated circuit (3D-SIC), achieved using copper through-silicon via interconnects.

Metrology for Emerging Integrated Systems

Completed
The Emerging Integrated Systems Metrology program supports measurements for advanced manufacturing and secure nano-manufacturing, novel devices and electronic materials. Specifically, the program aims to develop the metrology required to enable a quantitative assessment and physical understanding of...

Metrology for Printing and Graphic Arts Substrates

Completed
Paper is a complex, heterogeneous, multi-phased material. While there is a significant body of work related to the dielectric properties of cellulose, comparatively fewer studies have been done on printing and writing grades of paper. In our previous work, we have been able to differentiate between...
Moire Systems Susceptibility TDBG

Moiré Systems

Ongoing
Twisted double bilayer graphene The moiré systems of magic angle twisted bilayer graphene (MATBG) and related heterostructures support topological bands with nonzero Chern number, which is derived from the Berry curvature of the Bloch wave functions. Berry curvature is intimately related to orbital...
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