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Search Publications by: Jerome Cheron (Assoc)

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Displaying 1 - 19 of 19

Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz

November 15, 2023
Author(s)
Rob Jones, Jerome Cheron, Bryan Bosworth, Ben Jamroz, Dylan Williams, Miguel Urteaga, Ari Feldman, Peter Aaen
In this paper, we investigate the effect of two calibration errors, probe placement and capacitance per unit length, on transistor characterization from 220 GHz to 325 GHz on both a microstrip and an inverted coplanar waveguide with a via stitched ground

Electro-Optic Imaging Millimeter-Wave Propagation On-Wafer

September 27, 2023
Author(s)
Bryan Bosworth, Nick Jungwirth, Jerome Cheron, Franklyn Quinlan, Nate Orloff, Chris Long, Ari Feldman
We demonstrate an electro-optic imaging system for mmWaves propagating along a coplanar waveguide. Using dual optical frequency combs and a polarization resolved microscope, we image signals with bandwidth >100 GHz and >48 dB dynamic range.

Electro-Optically Derived Arbitrary Millimeter-Wave Sources with 100 GHz of Bandwidth

May 20, 2022
Author(s)
Bryan Bosworth, Nick Jungwirth, Kassiopeia Smith, Jerome Cheron, Franklyn Quinlan, Madison Woodson, Jesse Morgan, Andreas Beling, Ari Feldman, Dylan Williams, Nate Orloff, Chris Long
We demonstrate fine phase and amplitude control of millimeter waves, measured on-wafer using an electro-optic frequency comb, programmable spectral filter, and a uni-traveling carrier photodiode. We then synthesize arbitrary waveforms with 100 GHz of

A 110 GHz Comb Generator in a 250 nm InP HBT Technology

April 18, 2022
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Paul D. Hale, Rob Jones, Ari Feldman
We report a monolithic microwave integrated-circuit (MMIC) comb generator capable of producing a repetitive narrow pulse (7.1 ps pulse duration) with sharp edges (4.2 ps falling time). The circuit is designed in a 250 nm Indium Phosphide (InP)

High-Gain 500-GHz InP HBT Power Amplifiers

January 31, 2022
Author(s)
Jerome Cheron, Rob Jones, Richard Chamberlin, Dylan Williams, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Peter Aaen, Ari Feldman
We report two terahertz monolithic integrated circuit (TMIC) amplifiers operating at 500 GHz. The 6-stage single-ended power amplifiers use Teledyne's 130 nm indium-phosphide double heterojunction bipolar transistors in a common-base configuration. The

A Robust Algorithm for PAM4 Eye-Diagram Analysis

December 20, 2021
Author(s)
Jeffrey Jargon, Jerome Cheron
We propose a new approach for analyzing PAM4 (pulse amplitude modulation 4-level) eye diagrams that always provides a unique solution by making use of a K-Means algorithm in conjunction with a robust, shortest interval location estimator. Our motivation

Collector Series-Resistor to Stabilize a Broadband 400 GHz Common-Base Amplifier

October 14, 2021
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower end of the terahertz frequency band when the transistor is used in a common-base configuration

Electro-optically derived millimeter-wave sources with phase and amplitude control

October 12, 2021
Author(s)
Bryan Bosworth, Nick Jungwirth, Kassi Smith, Jerome Cheron, Franklyn Quinlan, Ari Feldman, Dylan Williams, Nate Orloff, Chris Long
Integrated circuits are building blocks in millimeter-wave handsets and base stations, requiring nonlinear characterization to optimize performance and energy efficiency. Today's sources use digital-to-analog converters to synthesize arbitrary electrical

Uncertainty of Large-Signal Measurements Under Variable Load Conditions

August 8, 2020
Author(s)
Konstanty Lukasik, Jerome Cheron, Gustavo Avolio, Arkadiusz Lewandowski, Dylan Williams, Wojciech Waitr, Dominique Schreurs
We thoroughly investigate the uncertainty of large-signal measurements when load conditions at the fundamental frequency change. In particular, we evaluate uncertainties of the incident a2 and scattered b2 frequency-domain spectra. They are of particular

On-Wafer Metrology of a Transmission Line Integrated Terahertz Source

May 10, 2020
Author(s)
Kassiopeia A. Smith, Bryan T. Bosworth, Nicholas R. Jungwirth, Jerome G. Cheron, Nathan D. Orloff, Christian J. Long, Dylan F. Williams, Richard A. Chamberlin, Franklyn J. Quinlan, Tara M. Fortier, Ari D. Feldman
A combination of on-wafer metrology and high-frequency network analysis was implemented to measure the response of transmission-line integrated Er-GaAs and InGaAs photomixers up to 1 THz to support the telecommunication and electronics industry.

Microwave Modeling and Characterization of Superconductive Circuits for Quantum Voltage Standard Applications at 4 Kelvin

February 10, 2020
Author(s)
Alirio De Jesus Soares Boaventura, Dylan F. Williams, Richard A. Chamberlin, Jerome G. Cheron, Anna E. Fox, Paul D. Dresselhaus, Peter F. Hopkins, Ian W. Haygood, Samuel P. Benz
We developed a cryogenic multiline thru-reflect-line (TRL) calibration kit for microwave characterizing of superconductive circuits used in the Josephson arbitrary waveform synthesizer of the national institute of standards and technology (NIST). We also

DARPA Organic Interconnect Characterization

January 27, 2020
Author(s)
Dylan Williams, Richard Chamberlin, Jerome Cheron, Sam Chitwood, Ken Willis, Brad Butler, Farhang Yazdani
We report on a study of interconnects fabricated on organic and silicon interposers used to connect state-of-the art digital, analog and RF chiplets commissioned by the U.S. Defense Advanced Research Projects Agency (DARPA). The interconnects were

Propagation of Compact-Modeling Measurement Uncertainty to 220 GHz Power-Amplifier Designs

November 5, 2018
Author(s)
Jerome Cheron, Dylan Williams, Konstanty Lukasik, Richard Chamberlin, Benjamin Jamroz, Erich N. Grossman, Wojciech Wiatr, Dominique Schreurs
We studied the impact of measurement uncertainties in a HBT model and their consequences on the electrical performance under large signal conditions at 9 GHz. Then we use the model with uncertainties to verify the ability of our model to accurately predict

On-Wafer Transistor Characterization to 750 GHz -the approach, results, and pitfalls

October 14, 2018
Author(s)
Dylan Williams, Jerome Cheron, Ben Jamroz, Richard Chamberlin
We review approaches developed at the National Institute of Standards and Technology for on-wafer transistor characterization and model extraction at sub-millimeter-wave wavelengths, and compare them to more common approaches developed for use at lower

Measurement Challenges for 5G and Beyond

July 14, 2017
Author(s)
Catherine A. Remley, Jeffrey A. Jargon, Joshua A. Gordon, Alexandra E. Curtin, David R. Novotny, Christopher L. Holloway, Robert D. Horansky, Michael S. Allman, Jeanne T. Quimby, Camillo A. Gentile, Peter B. Papazian, Ruoyu Sun, Damir Senic, Jelena Senic, Matthew T. Simons, Maria G. Becker, Dylan F. Williams, Richard A. Chamberlin, Jerome G. Cheron, Ari D. Feldman, Paul D. Hale, Mohit S. Mujumdar, Nada T. Golmie
National Metrology Institutes (NMIs) around the world are charged with supporting industry through improved measurement science and by providing a traceability path to fundamental physical standards. Mobile wireless communications have become a ubiquitous

Model Verification with Measurement Uncertainty

November 1, 2016
Author(s)
Dylan F. Williams, Richard A. Chamberlin, Jerome G. Cheron, Wei Zhao, Urteaga Miguel
We verify a model for state-of-the-art 250 nm heterojunction bipolar transistors with large-signal measurements. We demonstrate the propagation of correlated measurement uncertainties through the model-extraction and verification process, and use them to

The Role of Measurement Uncertainty in Achieving First-Pass Design Success

October 22, 2016
Author(s)
Dylan Williams, Richard Chamberlin, Wei Zhao, Jerome Cheron, Urteaga Miguel
We investigate the role of measurement uncertainty in achieving first-pass design success at microwave frequencies. We develop a model for state-of-the-art 250 nm heterojunction bipolar transistors, and demonstrate the propagation of correlated measurement

Verification of a Foundry-Developed Transistor Model with Measurement Uncertainty

May 26, 2016
Author(s)
Dylan Williams, Richard Chamberlin, Wei Zhao, Jerome Cheron, Urteaga Miguel
We verify a foundry model for state-of-the-art 250 nm heterojunction bipolar transistors with large-signal measurements. We demonstrate the propagation of correlated measurement uncertainties through the verification process, and use them to quantify the