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High-Gain 500-GHz InP HBT Power Amplifiers

Published

Author(s)

Jerome Cheron, Rob Jones, Richard Chamberlin, Dylan Williams, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Peter Aaen, Ari Feldman

Abstract

We report two terahertz monolithic integrated circuit (TMIC) amplifiers operating at 500 GHz. The 6-stage single-ended power amplifiers use Teledyne's 130 nm indium-phosphide double heterojunction bipolar transistors in a common-base configuration. The impedance matching networks of the first amplifier are designed with shunted lines while the second amplifier uses shunted metal-insulator-metal capacitors. We measured and compared the small-signal and large-signal performance of the two amplifiers around 500 GHz. Although the two TMICs exhibit a similar transducer gain (24 dB) and output power (up to -0.7 dBm), we obtain a better yield with the amplifiers designed with shunted lines.
Conference Dates
December 5-8, 2021
Conference Location
Monterey, CA, US
Conference Title
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

Keywords

Submillimeter-wave, terahertz monolithic integrated circuit (TMIC), power amplifier, common-base, indium phosphide (InP), double heterojunction bipolar transistor (HBT), WR2.2, WR1.5.

Citation

Cheron, J. , Jones, R. , Chamberlin, R. , Williams, D. , Urteaga, M. , Smith, K. , Jungwirth, N. , Bosworth, B. , Long, C. , Orloff, N. , Aaen, P. and Feldman, A. (2022), High-Gain 500-GHz InP HBT Power Amplifiers, 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Monterey, CA, US, [online], https://doi.org/10.1109/BCICTS50416.2021.9682464, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=932797 (Accessed April 21, 2024)
Created January 31, 2022, Updated November 29, 2022