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Small-Signal Model Verification and Analysis of Unmatched Multi-Finger HBT Cells at 220 GHz
Published
Author(s)
Robert Jones, Jerome Cheron, Benjamin Jamroz, Ari Feldman, Peter Aaen
Abstract
In this paper we verify the small-signal performance and simulation accuracy of two common-emitter and one common-base multi-finger HBT cells used in power amplifier designs at 220 GHz. We first verify the accuracy of the manifold simulation using passive structures that comprise the manifold before verifying the accuracy of the single-finger model and the four-finger cell simulation. We find that the discrepancies between simulation and measurement of the four-finger cell tends to be the same as or lower than the discrepancies with the single-finger device in the WR5.1 frequency band. Measurements on multiple sites of the single-finger and multi-finger devices shows the combined measurement error and manufacturing variation tending to be less than the simulation error. We also find that the simulation accurately predicts the gain of all cells but has discrepancies with the reflection coefficients of both common-emitter cells, with a difference in linear magnitude greater than 0.1, and accurately predicts the reflection coefficients of the common-base cell but inaccurately predicts its stability factor.
Proceedings Title
2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Jones, R.
, Cheron, J.
, Jamroz, B.
, Feldman, A.
and Aaen, P.
(2024),
Small-Signal Model Verification and Analysis of Unmatched Multi-Finger HBT Cells at 220 GHz, 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Fort Lauderdale, FL, US, [online], https://doi.org/10.1109/BCICTS59662.2024.10745687, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=958117
(Accessed October 9, 2025)