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On-Wafer Transistor Characterization to 750 GHz –the approach, results, and pitfalls
Published
Author(s)
Dylan Williams, Jerome Cheron, Ben Jamroz, Richard Chamberlin
Abstract
We review approaches developed at the National Institute of Standards and Technology for on-wafer transistor characterization and model extraction at sub-millimeter-wave wavelengths, and compare them to more common approaches developed for use at lower frequencies. We discuss important improvements in accuracy, approaches to estimating the uncertainty of the procedure, and recent research on further improving these methods.
Proceedings Title
BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium Digest
Conference Dates
October 14-17, 2018
Conference Location
San Diego, CA, US
Conference Title
BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium
Williams, D.
, Cheron, J.
, Jamroz, B.
and Chamberlin, R.
(2018),
On-Wafer Transistor Characterization to 750 GHz –the approach, results, and pitfalls, BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium Digest, San Diego, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=925665
(Accessed October 1, 2025)