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The Role of Measurement Uncertainty in Achieving First-Pass Design Success

Published

Author(s)

Dylan Williams, Richard Chamberlin, Wei Zhao, Jerome Cheron, Urteaga Miguel

Abstract

We investigate the role of measurement uncertainty in achieving first-pass design success at microwave frequencies. We develop a model for state-of-the-art 250 nm heterojunction bipolar transistors, and demonstrate the propagation of correlated measurement uncertainties through the modelextraction and verification process. We then investigate the accuracy of the extracted model parameters and the role of measurement uncertainty in gauging the ability of the model to predict the behavior of the transistor in large-signal operating states.
Proceedings Title
IEEE Compound Semiconductor IC Symposium Digest
Conference Dates
October 23-26, 2016
Conference Location
Austin, TX, US
Conference Title
Compound Semiconductor IC Symposium

Keywords

measurement uncertainty, microwave measurement, model verification, transistor model

Citation

Williams, D. , Chamberlin, R. , Zhao, W. , Cheron, J. and Miguel, U. (2016), The Role of Measurement Uncertainty in Achieving First-Pass Design Success, IEEE Compound Semiconductor IC Symposium Digest, Austin, TX, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=921396 (Accessed March 4, 2024)
Created October 22, 2016, Updated April 19, 2022