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Model Verification with Measurement Uncertainty



Dylan F. Williams, Richard A. Chamberlin, Jerome G. Cheron, Wei Zhao, Urteaga Miguel


We verify a model for state-of-the-art 250 nm heterojunction bipolar transistors with large-signal measurements. We demonstrate the propagation of correlated measurement uncertainties through the model-extraction and verification process, and use them to quantify the differences we observe in the measurements and models, and the accuracy of the model parameters we extract.
IEEE Transactions on Microwave Theory and Techniques


measurement uncertainty, microwave measurement, model verification, transistor model


Williams, D. , Chamberlin, R. , Cheron, J. , Zhao, W. and Miguel, U. (2016), Model Verification with Measurement Uncertainty, IEEE Transactions on Microwave Theory and Techniques, [online], (Accessed June 15, 2024)


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Created November 1, 2016, Updated April 4, 2019