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Model Verification with Measurement Uncertainty

Published

Author(s)

Dylan F. Williams, Richard A. Chamberlin, Jerome G. Cheron, Wei Zhao, Urteaga Miguel

Abstract

We verify a model for state-of-the-art 250 nm heterojunction bipolar transistors with large-signal measurements. We demonstrate the propagation of correlated measurement uncertainties through the model-extraction and verification process, and use them to quantify the differences we observe in the measurements and models, and the accuracy of the model parameters we extract.
Citation
IEEE Transactions on Microwave Theory and Techniques

Keywords

measurement uncertainty, microwave measurement, model verification, transistor model

Citation

Williams, D. , Chamberlin, R. , Cheron, J. , Zhao, W. and Miguel, U. (2016), Model Verification with Measurement Uncertainty, IEEE Transactions on Microwave Theory and Techniques, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=920140 (Accessed March 1, 2024)
Created November 1, 2016, Updated April 4, 2019