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Verification of a Foundry-Developed Transistor Model with Measurement Uncertainty

Published

Author(s)

Dylan Williams, Richard Chamberlin, Wei Zhao, Jerome Cheron, Urteaga Miguel

Abstract

We verify a foundry model for state-of-the-art 250 nm heterojunction bipolar transistors with large-signal measurements. We demonstrate the propagation of correlated measurement uncertainties through the verification process, and use them to quantify the differences we observe in the measurements and models.
Proceedings Title
International Microwave Symposium
Conference Dates
May 22-27, 2016
Conference Location
San Francisco, CA, US

Citation

Williams, D. , Chamberlin, R. , Zhao, W. , Cheron, J. and Miguel, U. (2016), Verification of a Foundry-Developed Transistor Model with Measurement Uncertainty, International Microwave Symposium, San Francisco, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=919866 (Accessed May 20, 2024)

Issues

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Created May 26, 2016, Updated April 19, 2022