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Verification of a Foundry-Developed Transistor Model with Measurement Uncertainty
Published
Author(s)
Dylan Williams, Richard Chamberlin, Wei Zhao, Jerome Cheron, Urteaga Miguel
Abstract
We verify a foundry model for state-of-the-art 250 nm heterojunction bipolar transistors with large-signal measurements. We demonstrate the propagation of correlated measurement uncertainties through the verification process, and use them to quantify the differences we observe in the measurements and models.
Williams, D.
, Chamberlin, R.
, Zhao, W.
, Cheron, J.
and Miguel, U.
(2016),
Verification of a Foundry-Developed Transistor Model with Measurement Uncertainty, International Microwave Symposium, San Francisco, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=919866
(Accessed October 10, 2025)