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Search Publications by

Aric Sanders (Assoc)

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Displaying 26 - 50 of 51

Multiscale Correlative Measurements of Nanoparticles in Cells

August 26, 2014
Aric W. Sanders, Kavita M. Jeerage, Cindi Schwartz, Alexandra E. Curtin, Ann C. Chiaramonti Debay
Nanoparticles are emerging as invaluable tools in disease diagnosis, disease treatment and imaging contrast enhancement agents. The interactions of nanoparticles with host organisms are complex and affect biological systems over length scales that vary

Influence of morphology on current-voltage behavior of GaN nanowires

July 1, 2014
Paul T. Blanchard, Kristine A. Bertness, Matthew D. Brubaker, Todd E. Harvey, Aric W. Sanders, Norman A. Sanford
We demonstrate the effect that the different morphologies of MBE-grown GaN nanowires (NWs) can have upon current-voltage (I-V) behavior. Two main aspects of NW morphology were investigated. The first aspect was the NW diameter, dNW. For single-crystal Si

Preparation of nanocomposite plasmonic films made from cellulose nanocrystals or mesoporous silica decorated with unidirectionally aligned gold nanorods

April 11, 2014
Michael Campbell, Qingkun Liu, Aric Sanders, Julian Evans, Ivan I. Smalyukh
Using liquid crystalline self-assembly of cellulose nanocrystals, we achieve long-range alignment of anisotropic metal nanoparticles in colloidal nanocrystal dispersions that are then used to deposit thin structured films with ordering features highly

Engineering Plant Cell Walls: Tuning Lignin Monomer Composition for Deconstructable Biofuels Feedstocks or Resilient Biomaterials

February 27, 2014
Peter Ciesielski, Michael Resch, Barron Hewetson, Jason Killgore, Alexandra Curtin, Nick Anderson, Ann Chiaramonti Debay, Donna C. Hurley, Aric Sanders, Michael Himmel, Clint Chapple, Nathan Mosier, Bryon Donohoe
Advances in genetic manipulation of the biopolymers that compose plant cell walls will facilitate more efficient production of biofuels and chemicals from biomass and lead to specialized biomaterials with tailored properties. Here we investigate several

In situ temperature measurements for selective epitaxy of GaN nanowires

February 17, 2014
Kristine A. Bertness, Matthew D. Brubaker, Todd E. Harvey, Shannon M. Duff, Aric W. Sanders, Norman A. Sanford
We demonstrate with spatially resolved, in situ temperature measurements and ex situ reflectance measurements that differences in appearance for masked and unmasked surfaces on patterned growth substrates arise from wavelength-dependent emissivity

Template synthesis of gold nanoparticles with an organic molecular cage

January 16, 2014
Ryan McCaffrey, Hai Long, Yinghua Jin, Aric Sanders, Wounjhang Park, Wei Zhang
We report a novel strategy for the controlled synthesis of gold nanoparticles (AuNPs) with narrow size distribution (1.9 plus or minus} 0.4 nm) through NP nucleation and growth inside the cavity of a well-defined three-dimensional, shape-persistent organic

Gallium Nitride Nanowire Probe for Near-Field Scanning Microwave Microscopy

January 15, 2014
Joel C. Weber, Paul T. Blanchard, Aric W. Sanders, Atif A. Imtiaz, Thomas M. Wallis, Kevin J. Coakley, Kristine A. Bertness, Pavel Kabos, Norman A. Sanford, Victor M. Bright
We report on the fabrication of a GaN nanowire probe for near-field scanning microwave microscopy. A single nanowire was Pt-bonded to a commercial Si cantilever prior to evaporation of a Ti/Al coating to provide a microwave signal pathway. Testing over a

Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air

May 3, 2013
Norman A. Sanford, Lawrence H. Robins, Paul T. Blanchard, K. Soria, B. Klein, Kristine A. Bertness, John B. Schlager, Aric W. Sanders
Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility and negative surface charge density sigma for c-axis oriented Si-doped GaN nanowires (NWs). In this approach we assumed that sigma was

Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates

January 16, 2013
Matthew D. Brubaker, Paul T. Blanchard, John B. Schlager, Aric W. Sanders, Alexana Roshko, Shannon M. Duff, Jason Gray, Victor M. Bright, Norman A. Sanford, Kristine A. Bertness
In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires

August 21, 2012
Andrew M. Herrero, Paul T. Blanchard, Aric W. Sanders, Matthew D. Brubaker, Norman A. Sanford, Alexana Roshko, Kristine A. Bertness
The development of Ni/Au contacts to Mg-doped GaN nanowires (NWs) is examined. Current-voltage (I-V) measurements of these Mg-doped nanowire devices frequently exhibit a strong degradation after annealing in N2/O2. This degradation originates from the poor

Catalyst-free GaN Nanowires as Nanoscale Light Emitters

March 1, 2012
Kristine A. Bertness, Norman A. Sanford, John B. Schlager, Alexana Roshko, Todd E. Harvey, Paul T. Blanchard, Matthew D. Brubaker, Andrew M. Herrero, Aric W. Sanders
Catalyst-free growth of GaN nanowires with molecular beam epitaxy produces material of exceptionally high quality with long minority carrier lifetimes and low surface recombination velocity. The nanowires grow by thermodynamic driving forces that enhance

MOSFETs made from GaN nanowires with fully conformal cylindrical gates

December 2, 2011
Paul T. Blanchard, Kristine A. Bertness, Todd E. Harvey, Aric W. Sanders, Norman A. Sanford, Steven M. George, Dragos Seghete
We report novel metal-oxide-semiconductor field effect transistors (MOSFETs) based on individual gallium nitride (GaN) nanowires with fully conformal cylindrical gates. The W/Al2O3 gates were deposited by atomic layer deposition. Reverse-bias breakdown

Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth growth on MBE nanowires

October 25, 2011
Aric Sanders, Paul T. Blanchard, Kristine A. Bertness, Matthew D. Brubaker, Ann Chiaramonti Debay, Christopher M. Dodson, Todd E. Harvey, Andrew M. Herrero, Devin M. Rourke, John B. Schlager, Norman Sanford, Albert Davydov, Abhishek Motayed, Denis Tsvetkov
We present the homoepitaxial growth of p-type, magnesium-doped gallium nitride shells using halide vapor phase epitaxy on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy. Scanning electron microscopy shows clear dopant

Controlled nucleation of GaN nanowires grown with molecular beam epitaxy

July 13, 2010
Kristine A. Bertness, Aric W. Sanders, Devin M. Rourke, Todd E. Harvey, Alexana Roshko, Norman A. Sanford
The location of GaN nanowires was controlled with essentially perfect selectivity using patterned SiNx prior to molecular beam epitaxy growth. Growth was uniform within mask openings and absent on the mask surface for over 95 % of the usable area of a 76

Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

February 12, 2010
Norman A. Sanford, Paul T. Blanchard, Kristine A. Bertness, Lorelle Mansfield, John B. Schlager, Aric W. Sanders, Alexana Roshko, Beau Burton, Steven George
Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift, mobility, surface band bending, and surface capture coefficient for

GaN nanowire carrier concentration calculated from light and dark resistance measurements

January 30, 2009
Lorelle Mansfield, Kristine A. Bertness, Paul T. Blanchard, Todd E. Harvey, Aric W. Sanders, Norman A. Sanford
We obtained limits on the carrier concentration and mobility of silicon-doped gallium nitride nanowires at room temperature with light and dark resistance data. Current-voltage measurements were performed on single-nanowire devices in the dark and under

MESFETs made from individual GaN nanowires

November 1, 2008
Paul T. Blanchard, Kristine A. Bertness, Todd E. Harvey, Lorelle Mansfield, Aric W. Sanders, Norman A. Sanford
In this paper, we demonstrate novelMESFETs based on individual GaN nanowires. The Pt/Au Schottky gates exhibited excellent two-terminal Schottky diode rectification behavior. The average effective Schottky barrier height was 0.87 eV, with an average

Resistivity study of si-doped GaN nanowires grown by catalyst-free MBE

September 16, 2008
Lorelle Mansfield, Paul T. Blanchard, Devin M. Rourke, Aric W. Sanders, Norman A. Sanford, Kristine A. Bertness
GaN nanowires doped with silicon were grown on Si(111) substrates by catalyst-free molecular beam epitaxy (MBE). Contacts were fabricated to single nanowires with a Ti/Al metallization scheme. Low-resistance ohmic contacts were achieved after annealing for

Nucleation and propagation mechanisms for catalyst-free growth of GaN nanowires

September 16, 2007
Kristine A. Bertness, Devin M. Rourke, Alexana Roshko, Lorelle Mansfield, Aric W. Sanders, Todd E. Harvey, Norman A. Sanford
Nucleation of GaN nanowires without catalysts in molecular beam epitaxy is shown to be a distinct process from nanowire propagation. Nanowire growth is relatively insensitive to starting conditions once the nanowire morphology is established, and is driven