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Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth growth on MBE nanowires



Aric Sanders, Paul T. Blanchard, Kristine A. Bertness, Matthew D. Brubaker, Ann Chiaramonti Debay, Christopher M. Dodson, Todd E. Harvey, Andrew M. Herrero, Devin M. Rourke, John B. Schlager, Norman Sanford, Albert Davydov, Abhishek Motayed, Denis Tsvetkov


We present the homoepitaxial growth of p-type, magnesium-doped gallium nitride shells using halide vapor phase epitaxy on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy. Scanning electron microscopy shows clear dopant contrast between the core and shell of the nanowire. The growth of magnesium-doped nanowire shells shows little or no effect on the lattice parameters of the underlying nanowires, as measured by x-ray diffraction (XRD). In contrast, photoluminescence of the nanowires show the prominent appearance of Mg related features. Finally, electrical measurements confirm the presence of electrically active holes in the nanowires.


Gallium Nitride Nanowires, PAMBE, HVPE, Nanotechnology, X-ray diffraction, SEM Contrast, Photoluminescence, Minority Carrier Injection


Sanders, A. , Blanchard, P. , Bertness, K. , Brubaker, M. , Chiaramonti Debay, A. , Dodson, C. , Harvey, T. , Herrero, A. , Rourke, D. , Schlager, J. , Sanford, N. , Davydov, A. , Motayed, A. and Tsvetkov, D. (2011), Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth growth on MBE nanowires, Nanotechnology, [online], (Accessed April 13, 2024)
Created October 24, 2011, Updated October 12, 2021