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Controlled nucleation of GaN nanowires grown with molecular beam epitaxy

Published

Author(s)

Kristine A. Bertness, Aric W. Sanders, Devin M. Rourke, Todd E. Harvey, Alexana Roshko, Norman A. Sanford

Abstract

The location of GaN nanowires was controlled with essentially perfect selectivity using patterned SiNx prior to molecular beam epitaxy growth. Growth was uniform within mask openings and absent on the mask surface for over 95 % of the usable area of a 76 mm diameter substrate. The diameters of the resulting nanowires were controlled by the size of the mask openings. Openings approximately 400 nm or less produced single nanowires with symmetrically faceted tips.
Citation
Nano Letters

Keywords

gallium nitride, nanowire, selective epitaxy

Citation

Bertness, K. , Sanders, A. , Rourke, D. , Harvey, T. , Roshko, A. and Sanford, N. (2010), Controlled nucleation of GaN nanowires grown with molecular beam epitaxy, Nano Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=904471 (Accessed May 18, 2022)
Created July 13, 2010, Updated February 19, 2017