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GaN nanowire carrier concentration calculated from light and dark resistance measurements

Published

Author(s)

Lorelle Mansfield, Kristine A. Bertness, Paul T. Blanchard, Todd E. Harvey, Aric W. Sanders, Norman A. Sanford

Abstract

We obtained limits on the carrier concentration and mobility of silicon-doped gallium nitride nanowires at room temperature with light and dark resistance data. Current-voltage measurements were performed on single-nanowire devices in the dark and under 360 nm illumination. Field-emission scanning electron microscopy was used to measure the device dimensions. The nanowires were modeled with cylindrical geometry, and solutions were computed with a nonlinear fit algorithm. Simulations were also performed to verigy the model. The carrier concentration was bounded by 6 x 1017 cm-3 and 1.3 x 1018 cm-3 and the mobility was between 300 cm2V-1 s-1 and 600 cm2V-1s-1.
Citation
Journal of Electronic Materials
Volume
38
Issue
4

Keywords

gallium nitride, mobility, nanostructures

Citation

Mansfield, L. , Bertness, K. , Blanchard, P. , Harvey, T. , Sanders, A. and Sanford, N. (2009), GaN nanowire carrier concentration calculated from light and dark resistance measurements, Journal of Electronic Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33145 (Accessed May 18, 2022)
Created January 30, 2009, Updated February 19, 2017