GaN nanowire carrier concentration calculated from light and dark resistance measurements

Published

January 30, 2009

Author(s)

Lorelle Mansfield, Kristine A. Bertness, Paul T. Blanchard, Todd E. Harvey, Aric W. Sanders, Norman A. Sanford

Abstract

We obtained limits on the carrier concentration and mobility of silicon-doped gallium nitride nanowires at room temperature with light and dark resistance data. Current-voltage measurements were performed on single-nanowire devices in the dark and under 360 nm illumination. Field-emission scanning electron microscopy was used to measure the device dimensions. The nanowires were modeled with cylindrical geometry, and solutions were computed with a nonlinear fit algorithm. Simulations were also performed to verigy the model. The carrier concentration was bounded by 6 x 10¹⁷ cm^-3 and 1.3 x 10¹⁸ cm^-3 and the mobility was between 300 cm²V^-1 s^-1 and 600 cm²V^-1s^-1.

Citation

Journal of Electronic Materials

Volume

38

Issue

4

Pub Type

Journals

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Keywords

gallium nitride, mobility, nanostructures

Citation

Mansfield, L. , Bertness, K. , Blanchard, P. , Harvey, T. , Sanders, A. and Sanford, N. (2009), GaN nanowire carrier concentration calculated from light and dark resistance measurements, Journal of Electronic Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33145 (Accessed October 15, 2025)