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Search Publications by: Eric K. Lin (Fed)

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Displaying 151 - 175 of 196

Reaction Front Induced Roughness in Chemically Amplified Photoresists

August 1, 2002
Author(s)
Vivek Prabhu, Ronald L. Jones, Eric K. Lin, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Christopher Soles, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
We have examined, with tapping mode atomic force microscopy(AFM), the effect of post-exposure bake times and developer on surface roughness using model bilayer interfaces of deuterium-labeled poly(tert-butyloxycarbonyloxy styrene) and poly(hydroxystyrene)

Direct Measurement of the Reaction Front in Chemically Amplified Photoresists

July 1, 2002
Author(s)
Eric K. Lin, Sushil K. Satija, Wen-Li Wu, Christopher L. Soles, D L. Goldfarb, B C. Trinque, S D. Burns, Ronald L. Jones, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, M Angelopoulos, C G. Willson
The continuing drive by the semiconductor industry to fabricate smaller structures with photolithography will soon require dimensional control at length scales, (2 to 5) nm, comparable to the size of the polymeric molecules in the materials used to pattern

Probing Surface and Bulk Chemistry in Resist Films Using Near Edge X-Ray Absorption Fine Structure

May 1, 2002
Author(s)
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald L. Jones, Eric K. Lin, Christopher Soles, Wen-Li Wu, Daniel A. Fischer, S Sambasivan, D L. Goldfarb, M Angelopoulos
Control of the shape, critical dimension (CD), and roughness is critical for the fabrication of sub 100 nm features, where the CD and roughness budget are approaching the molecular dimension of the resist polymers. One focus of our research is identifying

Controlling Morphology During Pattern Development in Thin Film Photoresists

February 1, 2002
Author(s)
Ronald L. Jones, Eric K. Lin, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Christopher L. Soles, Wen-Li Wu
We report on attempts to control surface morphology using current lithographic processes critical to the development of both inorganic and organic nano-structures. Bilayers of protected (base insoluble) and deprotected (base soluble) model lithographic

A Combinatorial Methodology to Discovering the Material Factors Controlling Resist Line Edge Roughness, Shape, and Critical Dimension

January 28, 2002
Author(s)
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald L. Jones, Eric K. Lin, Christopher Soles, Wen-Li Wu, D M. Goldfarb, M Angelopoulos
A combinatorial research methodology is discussed to determine the material factors that control line edge roughness (LER), shape, and critical dimension (CD) of developed photo-resist features. The approach involves generating a gradient of processing

Nanoporous Ultra Low-Dielectric Constant Organosilicates Templated by Triblock Copolymers

January 1, 2002
Author(s)
S Y. Yang, P A. Mirau, C S. Pai, O Nalamasu, E Reichmanis, J C. Pai, Yaw S. Obeng, J Seputro, Eric K. Lin, Hae-Jeong Lee, J Sun, D Gidley
Triblock polymers, poly(ethylene oxide-b-propylene oxide-b-ethylene oxide) (PEO-b-PPO-b-PEO), are used as molecular templates in poly(methyl silsesquioxane) (MSQ) matrices to fabricate nanoporous organosilicates. It is found that the fast solvent

Structural Characterization of Porous Low-k SiOC Thin Films Using Novel X-Ray Porosimetry

January 1, 2002
Author(s)
H W. Kim, Wen-Li Wu, Barry J. Bauer, Eric K. Lin, J Y. Kim, Y H. Kim, V. J. Lee
A novel x-ray porosimetry measurement is used to characterize the structure and properties of porous low-k dielectric films after varying process conditions. We determine the film thickness, density depth profile, average density, wall density, and

Confinement Effects on the Spatial Extent of the Reaction Front in Ultrathin Chemically Amplified Photoresists

December 1, 2001
Author(s)
D L. Goldfarb, M Angelopoulos, Eric K. Lin, Ronald L. Jones, Christopher Soles, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Wen-Li Wu
Sub-100 nm lithography poses strict requirements on photoresist material properties and processing conditions to achieve necessary critical dimension (CD) control of patterned structures. As resist thickness and feature linewidth decrease, fundamental

Thin Film Confinement Effects on the Thermal Properties of Model Photoresist Polymers

December 1, 2001
Author(s)
Christopher L. Soles, Eric K. Lin, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald L. Jones, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
The demand to print increasingly smaller microelectronic device features means that the thickness of the polymer films used in the lithographic processes must decrease. The thickness of these films is rapidly approaching the unperturbed dimensions of the

X-Ray Reflectivity and FTIR Measurements of N2 Plasma Effects on the Density Profile of Hydrogen Silsesquioxane Thin Films

October 1, 2001
Author(s)
V. J. Lee, C G. Chao, Eric K. Lin, Wen-Li Wu, B M. Fanconi, J K. Lan, Y L. Cheng, H C. Liou, Y L. Wang, M S. Feng
Non-destructive, specular X-ray reflectivity (SXR) measurements were used to investigate N2 plasma effects on the density depth profile of hydrogen silsesquioxane (HSQ) thin films. The SXR data indicate that the density profile of an HSQ film without

Molecular Templating of Nanoporous Ultralow Dielectric Constant (approximate to 1.5) Organosilicates by Tailoring the Microphase Separation of Triblock Copolymers

September 1, 2001
Author(s)
S Y. Yang, P A. Mirau, C S. Pai, O Nalamasu, E Reichmanis, Eric K. Lin, V. J. Lee, D W. Gidley, J N. Sun
Triblock polymers, poly(ethylene oxide-b-propylene oxide-b-ethylene oxide) (PEO-b-PPO-b-PEO), are used as molecular templates in poly(methyl silsesquioxane) (MSQ) matrices to fabricate nanoporous organosilicates. Initially homogeneous blends of the

Characterization of Thin and Ultrathin Polymer and Resist Films

August 1, 2001
Author(s)
D L. Goldfarb, Q Lin, M Angelopoulos, Christopher Soles, Eric K. Lin, Wen-Li Wu
The need for a better understanding of the physicochemical properties of radiation-sensitive thin polymer coatings for lithographic applications is driven by the trend of ever-shrinking pattern dimensions and film thickness, imposed by the semiconductor

Design of Nanoporous Ultra Low-Dielectric Constant Organosilicates by Self-Assembly

April 1, 2001
Author(s)
S Y. Yang, T L. Dull, J Sun, Albert F. Yee, P Mirau, C S. Pai, O Nalamasu, E Reichmanis, Eric K. Lin, V. J. Lee, D Gidley, W E. Frieze
Here we report a new class of materials that can reach ultra low- dielectric constants while maintaining good mechanical properties. In this approach, amphiphilic triblock copolymers, poly(ethylene oxide-b-propylene oxide-b-ethylene oxide) (PEO-b-PPO-b-PEO

Structure and Property Characterization of Low-k Dielectric Porous Thin Films

April 1, 2001
Author(s)
Barry J. Bauer, Eric K. Lin, V. J. Lee, Haonan Wang, Wen-Li Wu
High-resolution X-ray reflectivity and small angle neutron scattering measurements are used as complementary techniques to characterize the structure and properties of porous thin films for use as low-k interlevel dielectric (ILD) materials. With the
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