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Structure and Property Characterization of Low-k Dielectric Porous Thin Films



Barry J. Bauer, Eric K. Lin, V. J. Lee, Haonan Wang, Wen-Li Wu


High-resolution X-ray reflectivity and small angle neutron scattering measurements are used as complementary techniques to characterize the structure and properties of porous thin films for use as low-k interlevel dielectric (ILD) materials. With the addition of elemental composition information, the average pore size, porosity, pore connectivity, matrix density, average film density, film thickness, coefficient of thermal expansion, and moisture uptake of porous thin films are determined. Examples from different classes of materials and two analysis methods for small angle neutron scattering data are presented and discussed.
Journal of Electronic Materials
No. 4


low-k dielectric, pore structure, porous thin film, small-angle neutron scattering, x-ray reflectivity


Bauer, B. , Lin, E. , Lee, V. , Wang, H. and Wu, W. (2001), Structure and Property Characterization of Low-k Dielectric Porous Thin Films, Journal of Electronic Materials, [online], (Accessed June 20, 2024)


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Created April 1, 2001, Updated February 19, 2017