Bauer, B.
, Lin, E.
, Lee, V.
, Wang, H.
and Wu, W.
(2001),
Structure and Property Characterization of Low-k Dielectric Porous Thin Films, Journal of Electronic Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=851702
(Accessed October 7, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Structure and Property Characterization of Low-k Dielectric Porous Thin Films
Published
Author(s)
, , V. J. Lee, ,
Abstract
High-resolution X-ray reflectivity and small angle neutron scattering measurements are used as complementary techniques to characterize the structure and properties of porous thin films for use as low-k interlevel dielectric (ILD) materials. With the addition of elemental composition information, the average pore size, porosity, pore connectivity, matrix density, average film density, film thickness, coefficient of thermal expansion, and moisture uptake of porous thin films are determined. Examples from different classes of materials and two analysis methods for small angle neutron scattering data are presented and discussed.Citation
Journal of Electronic Materials
Volume
30
Issue
No. 4
Pub Type
Journals
Download Paper
Keywords
low-k dielectric, pore structure, porous thin film, small-angle neutron scattering, x-ray reflectivity
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created April 1, 2001, Updated February 19, 2017