Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Comparative Study of Pore Size of Low-Dielectric-Constant Porous Spin-On-Glass Films With Different Methods of Nondestructive Instrumentation

Published

Author(s)

E Kondoh, M R. Baklanov, Eric K. Lin, D Gidley, A Nakashima

Abstract

Porosity and pore size of siloxane-based porous spin-on-glass (SOG) thin films are comparatively studied with different non-destructive methods and also with reference nitrogen porosimetry. The pore size and its spread are found to increase with increasing porosity, or with decreasing dielectric constant.
Proceedings Title
Ultrasonic Electronics, Proceedings of the Symposium on | | | Japanese Journal of Applied Physics
Volume
40
Issue
No. 4
Conference Dates
April 1, 2001
Conference Location
Undefined
Conference Title
Symposium on Ultrasonic Electronics

Keywords

ellipsometric porosimetry, pore size, poresize distribution, porosity, porous low-k dielectric, positron annihilation lifetime spectrosc, small angle neutron scattering, x-ray reflectivity

Citation

Kondoh, E. , Baklanov, M. , Lin, E. , Gidley, D. and Nakashima, A. (2001), Comparative Study of Pore Size of Low-Dielectric-Constant Porous Spin-On-Glass Films With Different Methods of Nondestructive Instrumentation, Ultrasonic Electronics, Proceedings of the Symposium on | | | Japanese Journal of Applied Physics, Undefined (Accessed April 19, 2024)
Created March 31, 2001, Updated October 12, 2021