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Utilizing Near Edge X-ray Absorption Fine Structure to Probe interfacial issues in Photolithography

Published

Author(s)

Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Daniel A. Fischer, S Sambasivan, Eric K. Lin, Christopher Soles, Ronald L. Jones, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
Conference Location
Boston, MA
Conference Title
Special Issue of the 2002 Symposium on Microelectronics

Keywords

Electronic Materials, Lithography, Microstructure, NEXAFS, Spectroscopy, Thin Films, electron yield, fluorescence, interface, photo acid generator, photoresists, polymer thin films, surface segregation

Citation

Lenhart, J. , Fischer, D. , Sambasivan, S. , Lin, E. , Soles, C. , Jones, R. , Wu, W. , Goldfarb, D. and Angelopoulos, M. (2002), Utilizing Near Edge X-ray Absorption Fine Structure to Probe interfacial issues in Photolithography, Special Issue of the 2002 Symposium on Microelectronics, Boston, MA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=853914 (Accessed July 18, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 31, 2001, Updated October 12, 2021