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Characterization of Porous Low-k Dielectric Thin Films Using X-ray Reflectivity and Small-angle Neutron Scattering and Ion Scattering

Published

Author(s)

H Y. Lee, Eric K. Lin, Haonan Wang, Wen-Li Wu, W Chen, T A. Deis

Abstract

A novel methodology using a combination of ion scattering, x-ray reflectivity (SXR), and small angle neutron scattering was used to characterize the structure and properties of a hydrogen silsesquioxane (HSQ) based porous low-k dielectric films (Dow Corning XLK) after varying process conditions. The dielectric constant and the remaining Si?H fraction (degree of cure) of the samples were varied from 1.5 to 2.2 and from 30 % to 52 %, respectively, by controlling the mass ratio of the solvent and the HSQ resin in the initial solutions and the wet ammonia treatment time. We determined the density depth profile, average mass density, wall density, porosity, average pore size, average wall thickness, pore connectivity and atomic composition. The chemical bond structures were also measured using Fourier transform infrared (FTIR) spectroscopy. The density profile of each porous low-k film was uniform and only two layers were required to fit the experimental SXR data. Higher dielectric constant films show significantly higher wall densities and lower porosities and pore sizes. The measured increases in the wall density with lower Si-H fractions are consistent with the FTIR results.
Proceedings Title
International Interconnect Technology Conference | | | IEEE
Volume
87(18)
Conference Dates
June 4-6, 2001
Conference Location
Undefined
Conference Title
Proceedings of the IEEE International Interconnect Technology Conference

Keywords

density profile, hydrogen silsesquioxane, pore size, porosity, porous low-k dielectric, small angle neutron scattering, specular X-ray reflectivity, wall density

Citation

Lee, H. , Lin, E. , Wang, H. , Wu, W. , Chen, W. and Deis, T. (2001), Characterization of Porous Low-k Dielectric Thin Films Using X-ray Reflectivity and Small-angle Neutron Scattering and Ion Scattering, International Interconnect Technology Conference | | | IEEE, Undefined, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=851871 (Accessed May 27, 2024)

Issues

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Created May 31, 2001, Updated October 12, 2021