Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Structural Characterization of Porous Low-k SiOC Thin Films Using Novel X-Ray Porosimetry

Published

Author(s)

H W. Kim, Wen-Li Wu, Barry J. Bauer, Eric K. Lin, J Y. Kim, Y H. Kim, V. J. Lee

Abstract

A novel x-ray porosimetry measurement is used to characterize the structure and properties of porous low-k dielectric films after varying process conditions. We determine the film thickness, density depth profile, average density, wall density, and porosity. When the deposition temperature increases, the porosity and wall density increase. The low porosity of films deposited at 200 degrees C results in good mechanical properties with a dielectric constant as low as 2.5.
Citation
Proceedings of the IEEE International Interconnect Technology Conference
Volume
60(1)

Keywords

average density, carbon incorporated film (SiOC), density profile, deposition temperature, porosity, porous CVD low-k dielectric, wall density, x-ray porosimetry

Citation

Kim, H. , Wu, W. , Bauer, B. , Lin, E. , Kim, J. , Kim, Y. and Lee, V. (2002), Structural Characterization of Porous Low-k SiOC Thin Films Using Novel X-Ray Porosimetry, Proceedings of the IEEE International Interconnect Technology Conference, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=851998 (Accessed May 28, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created January 1, 2002, Updated February 17, 2017