Structural Characterization of Porous Low-k SiOC Thin Films Using Novel X-Ray Porosimetry

Published

January 1, 2002

Author(s)

H W. Kim, Wen-Li Wu, Barry J. Bauer, Eric K. Lin, J Y. Kim, Y H. Kim, V. J. Lee

Abstract

A novel x-ray porosimetry measurement is used to characterize the structure and properties of porous low-k dielectric films after varying process conditions. We determine the film thickness, density depth profile, average density, wall density, and porosity. When the deposition temperature increases, the porosity and wall density increase. The low porosity of films deposited at 200 degrees C results in good mechanical properties with a dielectric constant as low as 2.5.

Citation

Proceedings of the IEEE International Interconnect Technology Conference

Volume

60(1)

Pub Type

Journals

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Keywords

average density, carbon incorporated film (SiOC), density profile, deposition temperature, porosity, porous CVD low-k dielectric, wall density, x-ray porosimetry

Citation

Kim, H. , Wu, W. , Bauer, B. , Lin, E. , Kim, J. , Kim, Y. and Lee, V. (2002), Structural Characterization of Porous Low-k SiOC Thin Films Using Novel X-Ray Porosimetry, Proceedings of the IEEE International Interconnect Technology Conference, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=851998 (Accessed October 7, 2024)