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Search Publications by: Dean G. Jarrett (Fed)

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Displaying 51 - 75 of 178

Comparison of Multiple Methods for Obtaining PO Resistances with Low Uncertainties

September 3, 2019
Author(s)
Kwang Min Yu, Dean G. Jarrett, Albert Rigosi, Shamith Payagala, Marlin E. Kraft
Capabilities for high resistance determinations are essential for calibration of currents below 1 pA, as typically requested in several applications, including semiconductor device characterization, single electron transport, and ion beam technologies

10 T? and 100 T? Resistance Comparison between NIST and AIST

July 9, 2018
Author(s)
Dean G. Jarrett, Takehiko Oe, Nobu Kaneko, Shamith U. Payagala
We report the results of a comparison of 10 TΩ and 100 TΩ high resistance standards between the National Institute of Standards and Technology (NIST) and the National Institute for Advanced Industrial Science and Technology (AIST). Three standard resistors

Epitaxial Graphene p-n Junctions

July 9, 2018
Author(s)
Jiuning Hu, Mattias Kruskopf, Yanfei Yang, Bi Y. Wu, Jifa Tian, Alireza R. Panna, Albert F. Rigosi, Hsin Y. Lee, George R. Jones Jr., Marlin E. Kraft, Dean G. Jarrett, Kenji Watanabe, Takashi Taniguchi, Randolph E. Elmquist, David B. Newell
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexgonal boron nitride (hBN) is used as the gate dielectric. The four terminal longitudinal resistance across a single junction is well quantized at R_

Transport of NIST Graphene Quantized Hall Devices and Comparison with AIST Gallium-Arsenide Quantized Hall Devices

July 9, 2018
Author(s)
Dean G. Jarrett, Takehiko Oe, Randolph E. Elmquist, Nobu Kaneko, Albert F. Rigosi, Bi Y. Wu, Hsin Y. Lee, Yanfei Yang
We report the results of a pilot study where two graphene quantized Hall resistance (QHR) devices made at the National Institute of Standards and Technology (NIST) were hand carried from the USA to the National Institute for Advanced Industrial Science and

A Table-Top Graphene Quantized Hall Standard

July 8, 2018
Author(s)
Albert F. Rigosi, Alireza R. Panna, Shamith U. Payagala, George R. Jones Jr., Marlin E. Kraft, Mattias Kruskopf, Bi Y. Wu, Hsin Y. Lee, Yanfei Yang, Dean G. Jarrett, Randolph E. Elmquist, David B. Newell
We report the performance of a quantum standard based on epitaxial graphene maintained in a 5 T table-top cryocooler system. The ν = 2 resistance plateau, with a value of RK-90/2, is used to scale to 1 kΩ, allowing comparisons of the performance of a

Uncertainty of the Ohm Using Cryogenic and Non-Cryogenic Bridges

July 8, 2018
Author(s)
Alireza Panna, Marlin E. Kraft, Albert Rigosi, George R. Jones Jr., Shamith Payagala, Mattias Kruskopf, Dean G. Jarrett, Randolph Elmquist
We describe recent scaling measurements to decade resistance levels based on both cryogenic and non-cryogenic current comparator bridges. National measurement institutes and the International Bureau of Weights and Measures derive traceability for the SI

Fabrication of High Value Standard Resistors for ICE-LMVE

July 10, 2016
Author(s)
Dean G. Jarrett, Isabel Castro, Marlin E. Kraft
In Costa Rica, the Laboratorio Metrológico de Variables Eléctricas (LMVE) at the Instituto Costarricense de Electricidad (ICE) develops and improves measurement capabilities to promote and support the industrial innovation and development in the country

Quantum Hall Resistance Traceability for the NIST-4 Watt Balance

July 10, 2016
Author(s)
Dean G. Jarrett, Randolph Elmquist, Marlin E. Kraft, George R. Jones Jr., Shamith Payagala, Frank Seifert, Stephan Schlamminger, Darine El Haddad
Scaling from the quantum Hall resistance to 100 Ω standard resistors used by the NIST-4 Watt Balance involves multiple resistance standards and bridges to provide the lowest possible uncertainty. Described here is the infrastructure and procedures