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SIM COMPARISON OF DC RESISTANCE AT 1 Ohm, 1 MOhm, AND 1 GOhm

Published

Author(s)

Dean G. Jarrett, Randolph Elmquist, Nien F. Zhang, Alejandra Tonina, Janice Fernandes, Daniel Izquierdo, Dave Inglis, Felipe Hernandez-Marquez

Abstract

A regional comparison of DC resistance standards at the nominal values of 1 Ohm, 1 MOhm, and 1 GOhm has recently been completed in the System Interamericano de Metrogia (SIM) region. The motivation, design, standards, and results of this regional comparison are reported.
Proceedings Title
Conference on Precision Electromagnetic Measurements Conference Digest
Report Number
32890
Conference Dates
June 8-13, 2008
Conference Location
Broomfield, CO, USA
Conference Title
Conference on Precision Electromagnetic Measurements

Keywords

comparison, measure, resistor, SIM, standards, uncertainty

Citation

Jarrett, D. , Elmquist, R. , Zhang, N. , Tonina, A. , Fernandes, J. , Izquierdo, D. , Inglis, D. and Hernandez-Marquez, F. (2008), SIM COMPARISON OF DC RESISTANCE AT 1 Ohm, 1 MOhm, AND 1 GOhm, Conference on Precision Electromagnetic Measurements Conference Digest, Broomfield, CO, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32890 (Accessed April 22, 2024)
Created May 31, 2008, Updated October 12, 2021