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PUBLICATIONS

SIM COMPARISON OF DC RESISTANCE AT 1 Ohm, 1 MOhm, AND 1 GOhm

Published

Author(s)

Dean G. Jarrett, Randolph Elmquist, Nien F. Zhang, Alejandra Tonina, Janice Fernandes, Daniel Izquierdo, Dave Inglis, Felipe Hernandez-Marquez

Abstract

A regional comparison of DC resistance standards at the nominal values of 1 Ohm, 1 MOhm, and 1 GOhm has recently been completed in the System Interamericano de Metrogia (SIM) region. The motivation, design, standards, and results of this regional comparison are reported.
Proceedings Title
Conference on Precision Electromagnetic Measurements Conference Digest
Report Number
32890
Conference Dates
June 8-13, 2008
Conference Location
Broomfield, CO, USA
Conference Title
Conference on Precision Electromagnetic Measurements
Pub Type
Conferences

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Local Download

Keywords

comparison, measure, resistor, SIM, standards, uncertainty

Citation

Jarrett, D. , Elmquist, R. , Zhang, N. , Tonina, A. , Fernandes, J. , Izquierdo, D. , Inglis, D. and Hernandez-Marquez, F. (2008), SIM COMPARISON OF DC RESISTANCE AT 1 Ohm, 1 MOhm, AND 1 GOhm, Conference on Precision Electromagnetic Measurements Conference Digest, Broomfield, CO, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32890 (Accessed September 20, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created May 31, 2008, Updated October 12, 2021