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Search Publications by: Dean G. Jarrett (Fed)

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Displaying 76 - 100 of 178

Quantum Hall Resistance Traceability for the NIST-4 Watt Balance

July 10, 2016
Author(s)
Dean G. Jarrett, Randolph Elmquist, Marlin E. Kraft, George R. Jones Jr., Shamith Payagala, Frank Seifert, Stephan Schlamminger, Darine El Haddad
Scaling from the quantum Hall resistance to 100 Ω standard resistors used by the NIST-4 Watt Balance involves multiple resistance standards and bridges to provide the lowest possible uncertainty. Described here is the infrastructure and procedures

Third Generation of Adapted Wheatstone Bridge for High Resistance Measurements at NIST

July 10, 2016
Author(s)
Dean G. Jarrett, Shamith Payagala, Marlin E. Kraft, Kwang Min Yu
A third generation of adapted Wheatstone bridge is being developed at NIST to improve high resistance measurements and scaling from 1 TΩ to 10 PΩ. Improvements to extend range and reduce uncertainties include automated calibration of the voltage sources

A 100 Tohm Guarded Hamon Transfer Standard

August 24, 2014
Author(s)
Dean G. Jarrett, Edward O'Brien, Marlin E. Kraft
Guarded Hamon transfer standards are used at NIST for scaling to high resistance levels. An improved design for a guarded Hamon transfer standard in the range from 1 TΩ to 100 TΩ is described. Measurements taken to select the primary and guard resistor

Accurate High-Ohmic Resistance Measurement Techniques up to 1 Pohm

August 24, 2014
Author(s)
Dean G. Jarrett, Gert Rietveld, Beat Jeckelmann
An overview is presented on precision high-ohmic resistance measurements for values of 100 Mohmand above. The two main measurement techniques in this resistance range are discussed, the current integration technique and the adapted Wheatstone bridge. The

10 TOhm and 100 TOhm High Resistance Measurements at NIST

September 25, 2013
Author(s)
Dean G. Jarrett, Marlin E. Kraft
The measurement techniques, standards, and bridges used to calibrate standard resistors in the 10 TΩ to 100TΩ range at NIST are described. Standard resistors, guarded Hamon transfer standard, and 10:1 and 100:1 bridge ratios, were used to provide multiple

Traceability for Aerosol Electrometer in the fA Range

June 1, 2013
Author(s)
Dean G. Jarrett, Miles Owen
Described here are the configurations and procedures used to provide traceability to electrical standards for an aerosol electrometer calibration in the range ± 20 fA to ± 40 fA. The technique used here simulated the condition of a current induced when

Traceability for Aerosol Electrometer in the fA Range

June 1, 2013
Author(s)
Dean G. Jarrett, Miles Owen
Described here are the configurations and procedures used to provide traceability to electrical standards for an aerosol electrometer calibration in the range ± 20 fA to ± 40 fA. The technique used here simulated the condition of a current induced when

Calibrations of Current-to-Voltage Transimpedance Amplifiers Using Electrical Standards

June 13, 2010
Author(s)
Howard W. Yoon, George P. Eppeldauer, Dean G. Jarrett, Thomas C. Larason, Wan-Seop Kim
For photocurrent measurements with low uncertainties, a wide-dynamic range current-to-voltage converter traceable to resistance standards has been developed at the NIST. The design and calibration of the converter standard are described. For validation

NEW DESIGNS FOR HIGH-RESISTANCE STANDARD RESISTORS

May 1, 2010
Author(s)
Andrew J. Dupree, Dean G. Jarrett
Discussed are the efforts undertaken at the National Institute of Standards and Technology to create a new set of high-resistance standards (specifically the 10 MΩ to 100 MΩ range) using newer more stable film-type resistors. The history of film-type

NEXT GENERATION GUARDED HAMON TRANSFER STANDARDS FOR HIGH RESISTANCE

May 1, 2010
Author(s)
Dean G. Jarrett, Andrew J. Dupree
Guarded Hamon transfer standards have been used at NIST for decades for scaling to high resistance levels. A recent project has been undertaken to apply improved designs in guarded Hamon transfer standards to the 1 MΩ to 100 MΩ ranges with the larger goal

SIM Comparison of DC Resistance Standards at 1 {O}, 1 M{O}, and 1 G{O}

January 1, 2009
Author(s)
Dean G. Jarrett, Randolph E. Elmquist, Nien F. Zhang, Alejandra Tonina, M Porfiri, Janice Fernandes, H Schechter, Daniel Izquierdo, C Faverio, Daniel Slomovitz, Dave Inglis, Kai Wendler, Felipe Hernandez-Marquez, B Rodriguez
A set of regional comparisons of dc resistance standards at the nominal values of 1 {Ω}, 1 M {Ω}, and 1 G {Ω} has recently been completed in the Sistema Interamericano de Metrogia (SIM) region. The motivation, design, standards, and results of these