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Search Publications by: Monica D. Edelstein (Fed)

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Displaying 1 - 21 of 21

Methods to Characterize the Electrical and Mechanical Properties of Si Nanowires

September 30, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Hao Xiong, Monica D. Edelstein, John S. Suehle, Xiaoxiao Zhu, D. E. Ioannou, Curt A. Richter
We report metrology methods to characterize nanowires. In this work, representative devices and test structures, including nanoelectromechanical switches, non-volatile nanowire memory devices with SONOS structure, and both transfer-length-method and Kelvin

Silicon Nanowire Electromechanical Switches for Logic Device Application

July 6, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Monica D. Edelstein, John S. Suehle, Curt A. Richter
Electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes have been fabricated successfully by using single nanowires manipulation and compatible photolithographic processes. The switches are

Precise Manipulation and Alignment of Single Nanowire

March 2, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Curt A. Richter, Monica D. Edelstein, John E. Bonevich, Joseph Kopanski, John S. Suehle, Eric M. Vogel
Nanowires and nanotubes are being intensively investigated for nanoelectronic transport applications. The integration of such nanostructures into circuitry requires a simple, high-efficiency and low-cost strategy. Here we develop a single nanowire

Precise Alignment of single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures

March 1, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Curt A. Richter, Monica D. Edelstein, John E. Bonevich, Joseph Kopanski, John S. Suehle, Eric M. Vogel
The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here we present a single nanowire manipulating system to precisely manipulate and align

Low-Frequency Noise Characterizations of ZnO Nanowires Field Effect Transistors

February 28, 2007
Author(s)
Wenyong Wang, Hao Xiong, Monica D. Edelstein, David J. Gundlach, John S. Suehle, Curt A. Richter, Woong-Ki Hong, Takhee Lee
Field effect transistors (FETs) of single-crystalline ZnO nanowires have been fabricated and low frequency (f) noise characterizations of the ZnO nanowire FETs have been performed for the first time. The obtained noise power spectra show a pronounced 1/f

Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors

December 1, 2005
Author(s)
Sang-Mo Koo, Qiliang Li, Monica D. Edelstein, Curt A. Richter, Eric M. Vogel
We report an approach to engineer the local band structure of silicon nanowire (SiNW) field-effect transistors (FETs) by using a dual-gated structure. In this device structure, by changing the local bandgap profile of the channel, the top-gate can suppress

Silicon Nanowires As Enhancement-mode Schottky-barrier Field-effect Transistors

June 29, 2005
Author(s)
Sang-Mo Koo, Monica D. Edelstein, Qiliang Li, Curt A. Richter, Eric M. Vogel
Silicon nanowire field-effect transistors (SiNWFETs) have been fabricated with a highly simplified integration scheme to function as Schottky barrier transistors and excellent enhancement-mode characteristics with high on/off current ratio 107 are

Nanometer Gaps in Gold Wires Are Formed By Thermal Migration

June 7, 2005
Author(s)
Ganesh K. Ramachandran, Monica D. Edelstein, David L. Blackburn, John S. Suehle, Eric M. Vogel, Curt A. Richter
The formation of gold wires separated by a few nanometers is reported. Such nanometer separated gaps are formed by ramping, at ambient conditions, a bias voltage across a thin gold wire until the wire breaks or fails. Externally heating the wire does not

Recent Developments in Producing Test-structures for Use as Critical Dimension Reference Materials

March 1, 2004
Author(s)
Richard A. Allen, Ravi I. Patel, Michael W. Cresswell, Christine E. Murabito, Brandon Park, Monica D. Edelstein, Loren W. Linholm
NIST is developing Single-Crystal Critical-Dimension Reference Materials (SCCDRM) which address the need of the semiconductor and semiconductor equipment industries for a well-characterized artifact to serve as the basis for comparing the performance of

Superconformal Electrodeposition of Silver in Submicrometer Features

August 1, 2002
Author(s)
Thomas P. Moffat, B C. Baker, Daniel Wheeler, John E. Bonevich, Monica D. Edelstein, D R Kelly, L Gan, Gery R. Stafford, P J. Chen, William F. Egelhoff Jr., Daniel Josell
The generality of the curvature enhanced accelerator coverage (CEAC) model of superconformal electrodeposition is demonstrated through application to superconformal filling of fine trenches during silver deposition from selenium-catalyzed silver cyanide

Challenges of High-[kappa] Gate Dielectrics for Future MOS Devices

May 13, 2001
Author(s)
John S. Suehle, Eric M. Vogel, Monica D. Edelstein, Curt A. Richter, Nhan Van Nguyen, Igor Levin, Debra Kaiser, Hanchang F. Wu, J B. Bernstein
As the feature sizes of complementary metal-oxide-semiconductor (CMOS) devices are scaled downward, the gate dielectric thickness must also decrease to maintain a value of capacitance to reduce short-channel effects and to keep device drive current at an

In Situ Diffuse Reflectance Spectroscopy for Measurement and Control of III-V Molecular Beam Epitaxy

March 17, 2000
Author(s)
Jonathan E. Guyer, W. F. Tseng, W. R. Thurber, Eric M. Vogel, Monica D. Edelstein, Donald A. Gajewski, Joseph G. Pellegrino
We report the use of diffuse reflectance spectroscopy for active, closed-loop control of substrate temperature during the growth of a modulation doped heterostructure. Measurement and control of substrate temperature is a common difficulty for molecular

Electrical Detection of Defects in SIMOX Buried Oxides: Pipes and Precipitates

October 5, 1998
Author(s)
Peter Roitman, Monica D. Edelstein, S. J. Krause
Two defect types have been identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism; the tendency of the Si