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Electrical Detection of Defects in SIMOX Buried Oxides: Pipes and Precipitates
Published
Author(s)
Peter Roitman, Monica D. Edelstein, S. J. Krause
Abstract
Two defect types have been identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism; the tendency of the Si-SiO2 system at high temperature to separate into regions of Si and SiO2 rather then forming SiOx. Below an oxygen dose of approximately} 4 x 1017 cm-2, the buried oxide is not continuous and as the dose is lowered the implanted region becomes a layer of SiO2 precipitates. Above the dose of approximately} 4 x 1017 cm-2, the buried oxide is continuous, but Si precipitates approximately} 50 nm thick are present in the oxide.
Conference Dates
October 5-8, 1998
Conference Location
Stuart, FL, USA
Conference Title
IEEE International SOI Conference
Pub Type
Conferences
Keywords
buried oxide, silicon, SIMOX, SOI, SEM, TEM
Citation
Roitman, P.
, Edelstein, M.
and Krause, S.
(1998),
Electrical Detection of Defects in SIMOX Buried Oxides: Pipes and Precipitates, IEEE International SOI Conference, Stuart, FL, USA
(Accessed October 1, 2025)