Electrical Detection of Defects in SIMOX Buried Oxides: Pipes and Precipitates
Peter Roitman, Monica D. Edelstein, S. J. Krause
Two defect types have been identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism; the tendency of the Si-SiO2 system at high temperature to separate into regions of Si and SiO2 rather then forming SiOx. Below an oxygen dose of approximately} 4 x 1017 cm-2, the buried oxide is not continuous and as the dose is lowered the implanted region becomes a layer of SiO2 precipitates. Above the dose of approximately} 4 x 1017 cm-2, the buried oxide is continuous, but Si precipitates approximately} 50 nm thick are present in the oxide.
October 5-8, 1998
Stuart, FL, USA
IEEE International SOI Conference
buried oxide, silicon, SIMOX, SOI, SEM, TEM
, Edelstein, M.
and Krause, S.
Electrical Detection of Defects in SIMOX Buried Oxides: Pipes and Precipitates, IEEE International SOI Conference, Stuart, FL, USA
(Accessed June 4, 2023)