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Electrical Detection of Defects in SIMOX Buried Oxides: Pipes and Precipitates

Published

Author(s)

Peter Roitman, Monica D. Edelstein, S. J. Krause

Abstract

Two defect types have been identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism; the tendency of the Si-SiO2 system at high temperature to separate into regions of Si and SiO2 rather then forming SiOx. Below an oxygen dose of approximately} 4 x 1017 cm-2, the buried oxide is not continuous and as the dose is lowered the implanted region becomes a layer of SiO2 precipitates. Above the dose of approximately} 4 x 1017 cm-2, the buried oxide is continuous, but Si precipitates approximately} 50 nm thick are present in the oxide.
Conference Dates
October 5-8, 1998
Conference Location
Stuart, FL, USA
Conference Title
IEEE International SOI Conference

Keywords

buried oxide, silicon, SIMOX, SOI, SEM, TEM

Citation

Roitman, P. , Edelstein, M. and Krause, S. (1998), Electrical Detection of Defects in SIMOX Buried Oxides: Pipes and Precipitates, IEEE International SOI Conference, Stuart, FL, USA (Accessed April 16, 2024)
Created October 4, 1998, Updated October 12, 2021