Li, Q.
, Koo, S.
, Edelstein, M.
, Suehle, J.
and Richter, C.
(2007),
Silicon Nanowire Electromechanical Switches for Logic Device Application, Nanotechnology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32567
(Accessed October 15, 2024)
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Silicon Nanowire Electromechanical Switches for Logic Device Application
Published
Author(s)
, Sang-Mo Koo, , ,
Abstract
Electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes have been fabricated successfully by using single nanowires manipulation and compatible photolithographic processes. The switches are sharply turned on when the suspended part of nanowire is bent to touch the bottom metal electrode by applying an electric field across the devices. These reversible switching characteristics are observed from both two and three terminal switches. The large ON/OFF ratio of the devices combined with their simple structures which streamline the fabrication process makes them attractive for use in nanoelectromechanical system applications such as logic switches and memory devices.Citation
Nanotechnology
Volume
18
Pub Type
Journals
Download Paper
Keywords
electromechanical switch, nanowire, threshold voltage
Citation
Issues
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Created July 5, 2007, Updated October 12, 2021