Methods to Characterize the Electrical and Mechanical Properties of Si Nanowires

Published

September 30, 2007

Author(s)

Qiliang Li, Sang-Mo Koo, Hao Xiong, Monica D. Edelstein, John S. Suehle, Xiaoxiao Zhu, D. E. Ioannou, Curt A. Richter

Abstract

We report metrology methods to characterize nanowires. In this work, representative devices and test structures, including nanoelectromechanical switches, non-volatile nanowire memory devices with SONOS structure, and both transfer-length-method and Kelvin test structures, have been developed to investigate the electrical and mechanical properties of the silicon nanowires. These methods and test structures can be readily applied to other (non-Si) semiconductor nanowires/nanotubes.

Proceedings Title

International Conference on Frontiers of Characterization and Metrology for Nanoelectronics

Conference Dates

March 27-29, 2007

Conference Location

Gaithersburg, MD, USA

Conference Title

2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics

Pub Type

Conferences

Download Paper

Local Download

Keywords

Nanoelectromechanical System, Nanowire, Non-volatile memory., Transfer Length Method

Citation

Li, Q. , Koo, S. , Xiong, H. , Edelstein, M. , Suehle, J. , Zhu, X. , Ioannou, D. and Richter, C. (2007), Methods to Characterize the Electrical and Mechanical Properties of Si Nanowires, International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, Gaithersburg, MD, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32634 (Accessed December 14, 2024)