Vogel, E.
, Edelstein, M.
and Suehle, J.
(2001),
Reliability of Ultra-Thin Silicon Dioxide Under Substrate Hot-Electronic, Substrate Hot-Hole, and Tunneling Stress, Microelectronic Engineering
(Accessed October 27, 2025)
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Reliability of Ultra-Thin Silicon Dioxide Under Substrate Hot-Electronic, Substrate Hot-Hole, and Tunneling Stress
Published
Author(s)
, ,
Abstract
Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation and breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from substrate hot-electron injection confirm that energetic electrons are responsible for degradation and breakdown of ultra-thin silicon dioxide under tunneling stress conditions. Substrate hot-hole injection experiments suggest that mechanisms other than trapping of hotholes may be responsible for the breakdown ultra-thin silicon dioxide.Citation
Microelectronic Engineering
Pub Type
Journals
Keywords
reliability, silicon dioxide, tunneling, MOS, semiconductor, breakdown
Citation
Issues
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Created November 1, 2001, Updated February 19, 2017