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Defect Generation and Breakdown of Ultra-Thin Silicon Dioxide Induced by Substrate Hot Hole Injection



Eric M. Vogel, Monica D. Edelstein, John S. Suehle


Hole-induced bulk and interface defect generation and breakdown in ultra-thin oxide (<2.0 nm) are studied using substrate hot hole injection. The results show that although these substrate hot holes are effective in creating electrically active damange in the dielectrics, these defects are very ineffective in causing breakdown as compared to those defects created by constant voltage tunneling stress. Identical to hole trapping in thicker oxides, substrate hot hole effect generation was independent of electric field, decreased with decreasing thickness (in this thickness range), and increased with decreasing temperature. Concomitant and subsequent electron injection on oxides first injected with holes showed non-increased defect generation caused by the interaction of electrons and trapped holes. The defect generagion and breakdown of ultra-thin oxides by substrate hot hole stress is significantly different than that observed for constant voltage tunneling stress. This suggests that mechanisms other than defect creation by trapping of hot holes may be responsible for the degradation and breakdown of ultra-thin oxide at low gate voltage.
Journal of Applied Physics


defects, silicon, oxide, reliability, degradation, electrons, holes, breakdown


Vogel, E. , Edelstein, M. and Suehle, J. (2001), Defect Generation and Breakdown of Ultra-Thin Silicon Dioxide Induced by Substrate Hot Hole Injection, Journal of Applied Physics (Accessed April 15, 2024)
Created August 31, 2001, Updated October 12, 2021