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Low-Frequency Noise Characterizations of ZnO Nanowires Field Effect Transistors

Published

Author(s)

Wenyong Wang, Hao Xiong, Monica D. Edelstein, David J. Gundlach, John S. Suehle, Curt A. Richter, Woong-Ki Hong, Takhee Lee

Abstract

Field effect transistors (FETs) of single-crystalline ZnO nanowires have been fabricated and low frequency (f) noise characterizations of the ZnO nanowire FETs have been performed for the first time. The obtained noise power spectra show a pronounced 1/f dependence and a Hooge?s constant of 1.9 x 10-2 is estimated for the ZnO nanowire FETs from the gate dependence of the noise amplitude. Characterizations have also been carried out in oxygen to investigate the change of the noise characteristics under different environment.
Citation
Journal of Applied Physics
Volume
101

Keywords

FET, nanowire, noise, ZnO

Citation

Wang, W. , Xiong, H. , Edelstein, M. , Gundlach, D. , Suehle, J. , Richter, C. , Hong, W. and Lee, T. (2007), Low-Frequency Noise Characterizations of ZnO Nanowires Field Effect Transistors, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32398 (Accessed June 9, 2023)
Created February 27, 2007, Updated October 12, 2021