Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors
Sang-Mo Koo, Qiliang Li, Monica D. Edelstein, Curt A. Richter, Eric M. Vogel
We report an approach to engineer the local band structure of silicon nanowire (SiNW) field-effect transistors (FETs) by using a dual-gated structure. In this device structure, by changing the local bandgap profile of the channel, the top-gate can suppress the ambipolar conduction which is one of the limiting factors of nanotube- or nanowire FETs as required for complimentary logic applications. Our experimental results indicate that an improved on/off current ratio and superior top-gate control with tunable electron- or hole- dominant conductions can be achieved in the SiNW FETs (Wnano ?? 60 nm), compared to simultaneously prepared control devices of large channel width (Wref ?? 5 ??m). It has also been shown by 2-dimensional numerical simulations that the electrostatic bandgap engineering effect by the top-gate is enhanced as the channel width of the FETs decreases.
, Li, Q.
, Edelstein, M.
, Richter, C.
and Vogel, E.
Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors, Nanotechnology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32067
(Accessed December 7, 2023)