Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors



Sang-Mo Koo, Qiliang Li, Monica D. Edelstein, Curt A. Richter, Eric M. Vogel


We report an approach to engineer the local band structure of silicon nanowire (SiNW) field-effect transistors (FETs) by using a dual-gated structure. In this device structure, by changing the local bandgap profile of the channel, the top-gate can suppress the ambipolar conduction which is one of the limiting factors of nanotube- or nanowire FETs as required for complimentary logic applications. Our experimental results indicate that an improved on/off current ratio and superior top-gate control with tunable electron- or hole- dominant conductions can be achieved in the SiNW FETs (Wnano ?? 60 nm), compared to simultaneously prepared control devices of large channel width (Wref ?? 5 ??m). It has also been shown by 2-dimensional numerical simulations that the electrostatic bandgap engineering effect by the top-gate is enhanced as the channel width of the FETs decreases.


Silicon Nanowire, Nanowire transistor, Nanowire FET, semiconductor device


Koo, S. , Li, Q. , Edelstein, M. , Richter, C. and Vogel, E. (2005), Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors, Nanotechnology, [online], (Accessed June 23, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created November 30, 2005, Updated October 12, 2021