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Search Publications by: Richard A. Allen (Fed)

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Displaying 26 - 50 of 136

MEMS Young's Modulus and Step Height Measurements with Round Robin Results

September 30, 2010
Author(s)
Janet M. Cassard, Richard A. Allen, Craig D. McGray, Jon C. Geist
This paper presents the results of a microelectromechanical systems (MEMS) Young s modulus and step height round robin experiment, completed in April 2009, which compares Young s modulus and step height measurement results at a number of laboratories. The

A ROUND ROBIN EXPERIMENT TO PROVIDE PRECISION AND BIAS FOR SEMI MS5: TEST METHOD FOR WAFER BOND STRENGTH MEASUREMENTS USING MICRO-CHEVRON TEST STRUCTURES

December 7, 2009
Author(s)
Richard A. Allen, Winthrop A. Baylies, Paul Langer, Ralph Danzl, Frank W. DelRio, Gavin Horn, Roy Knechtel, Michael Mattes, David T. Read, Sumant Sood, Kevin T. Turner
An international round robin was organized to update SEMI Standard MS5: Test Method for Wafer Bond Strength Measurements using Micro-Chevron Test Structures. Results from the round robin allowed for inclusion of a Precision and Bias statement. The new

Mobile Microrobot Characterization through Performance-Based Competitions

November 19, 2009
Author(s)
Jason J. Gorman, Craig D. McGray, Richard A. Allen
Recent advances in the design and fabrication of microelectromechanical systems (MEMS) have enabled the development of mobile microrobots that can autonomously navigate and manipulate in controlled environments. It is expected that this technology will be

Nanoindentation of Si Nanostructures: Buckling and Friction at Nanoscales

September 18, 2009
Author(s)
Huai Huang, Bin Li, Qiu Zhao, Zhiquan Luo, Jay Im, Min Kang, Richard A. Allen, Michael W. Cresswell, Rui Huang, Paul S. Ho
A nanoindentation system was employed to characterize mechanical properties of silicon nanolines (SiNLs), which were fabricated by an anisotropic wet etching (AWE) process. The SiNLs had the linewidth ranging from 24 nm to 90 nm, having smooth and vertical

MEMS in Action: RoboCup Nanogram 2009

August 1, 2009
Author(s)
Richard A. Allen, Craig D. McGray
From June 29 through July 5, 2009 teams from around the world participated in the International RoboCup competition, held in Graz, Austria. In addition to humanoid robots playing soccer on turf fields, companion robots demonstrating their ability to help

Indentation of Single-Crystal Silicon Nanolines: Buckling and Contact Friction at Nanoscale

April 8, 2009
Author(s)
Bin Li, Qiu Zhao, Huai Huang, Zhiquan Luo, Jay Im, Michael W. Cresswell, Richard A. Allen, Min K. Kang, Rui Huang, Paul S. Ho
Silicon nanostructures are essential building blocks for nanoelectronic devices and nano-electromechanical systems (NEMS). Mechanical characterization at nanoscale is important for practical applications but remains challenging as the mechanical properties

Controlled Formation and Resistivity Scaling of Nickel Silicide Nanolines

February 25, 2009
Author(s)
Bin Li, Zhiquan Luo, Paul S. Ho, Li Shi, Lew Rabenberg, JiPing Zhou, Richard A. Allen, Michael W. Cresswell
We demonstrate a top-down method to fabricate nickel mono-silicide (NiSi) nanolines with smooth side walls and linewidths down to 15 nm. Four probe electrical measurements revealed that the electrical resistivity at room temperature remained constant as

Comparison of Measurement Techniques for Linewidth Metrology on Advanced Photomasks

February 19, 2009
Author(s)
Stewart Smith, Andreas Tsiamis, Martin McCallum, Andrew Hourd, J Stevenson, Anthony Walton, Ronald G. Dixson, Richard A. Allen, James E. Potzick, Michael W. Cresswell, Ndubuisi George Orji
This paper compares electrical, optical, and atomic force microscope (AFM) measurements of critical dimension (CD)made on a chrome on quartz photomask. Test structures suitable for direct, on-mask electrical probing have been measured using the above three

Experimental and Simulation Studies of Resistivity of Nanoscale Copper Films

February 19, 2009
Author(s)
Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Mark D. Vaudin, Mona E. Zaghloul
The effect of film thickness on the resistivity of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistance, film thickness, and mean grain-size measurements by using four-point probe, profilometer, and

A Standard Method for Measuring Wafer Bond Strength for MEMS Applications

December 23, 2008
Author(s)
Richard A. Allen, Janet M. Cassard, Winthrop A. Baylies, David T. Read, George D. Quinn, Frank W. DelRio, Kevin T. Turner, Michael Bernasch, Joerg Bagdahn
A round robin, to provide precision and bias data for SEMI standard MS5-1107, Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures, in underway. The precision and bias data, combined with experience in applying the test

2nd Annual Tri-National Workshop on Standards for Nanotechnology - (NIST presentations)

December 10, 2008
Author(s)
Ronald G. Dixson, Jon R. Pratt, Vincent A. Hackley, James E. Potzick, Richard A. Allen, Ndubuisi G. Orji, Michael T. Postek, Herbert S. Bennett, Theodore V. Vorburger, Jeffrey A. Fagan, Robert L. Watters
A new era of cooperation between North American National Measurement Institutes (NMIs) was ushered by the National Research Council of Canada Institute for National Measurement Standards (NRC-INMS) on February 7, 2007 when the first Tri-National workshop

Extraction of Sheet Resistance and Line Width from All-Copper ECD Test Structures Fabricated from Silicon Preforms

November 3, 2008
Author(s)
Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, Stewart Smith, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Richard A. Allen, Michael W. Cresswell
Test structures have been fabricated to allow Electrical Critical Dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in IC interconnect systems. The implementation of these structures is such that no

Comparison of SEM and HRTEM CD Measurements Extracted from Test-Structures Having Feature Linewidths from 40 nm to 240 nm

January 1, 2008
Author(s)
Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Christine E. Murabito, Ronald G. Dixson, Amy Hunt
CD (Critical Diminsion) measurements have been extracted from SEM (Scanning Electron Microscopy) and HRTEM (High Resolution Transmission Electron Microscopy) images of the same set of monocrystalline silicon features having linewidths between 40 nm and 240

Nano- and Atomic-Scale Length Metrology

December 14, 2007
Author(s)
Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, Ndubuisi G. Orji, Shaw C. Feng, Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Wei Chu

Fabrication and Characterization of Patterned Single-Crystal Silicon Nanolines

December 7, 2007
Author(s)
Bin Li, Min K. Kang, Kuan Lu, Rui Huang, Paul S. Ho, Richard A. Allen, Michael W. Cresswell
This letter demonstrates a method to fabricate single-crystal Si nanolines, with a rectangular cross section and atomically flat sidewalls. The high quality of these nanolines leads to superb mechanical properties, with the strain to fracture estimated by

Photomask Applications of Traceable Atomic Force Microscope Dimensional Metrology at NIST

October 1, 2007
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, James E. Potzick, Joseph Fu, Michael W. Cresswell, Richard A. Allen, S J. Smith, Anthony J. Walton
The National Institute of Standards and Technology (NIST) has a multifaceted program in AFM dimensional metrology. Two major instruments are being used for traceable measurements. The first is a custom in-house metrology AFM, called the calibrated AFM (C

CD Reference Materials Fabricated on Monolithic 200 mm Wafers for Automated Metrology Tool Applications

September 30, 2007
Author(s)
Richard A. Allen, Ronald G. Dixson, Michael W. Cresswell, William Gutherie, Byron J. Shulver, Andrew S. Bunting, J. T. Stevenson, Anthony Walton
Recently, prototype isolated-line, single-crystal CD reference materials (SCCDRMs) with linewidths as narrow as 40 nm ? 1.5 nm have been reported. These reference materials, designated NIST Reference Material (RM) 8111 were configured as a 10 mm by 11 mm
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