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Fabrication and Characterization of Patterned Single-Crystal Silicon Nanolines

Published

Author(s)

Bin Li, Min K. Kang, Kuan Lu, Rui Huang, Paul S. Ho, Richard A. Allen, Michael W. Cresswell

Abstract

This letter demonstrates a method to fabricate single-crystal Si nanolines, with a rectangular cross section and atomically flat sidewalls. The high quality of these nanolines leads to superb mechanical properties, with the strain to fracture estimated by nanoindentation tests close to the theoretical limit. A large displacement burst before fracture was observed, which is attributed to a buckling mechanism. Numerical simulations show that the critical load for buckling depends on the friction at the contact surface.
Citation
Nano Letters
Volume
8
Issue
1

Keywords

buckling, displacement burst, fabrication, fracture, friction, gratings, lattice-plane-selective etching, MEMS, nano-indentation measurement, nano-line, silicon, simulation, strain

Citation

Li, B. , Kang, M. , Lu, K. , Huang, R. , Ho, P. , Allen, R. and Cresswell, M. (2007), Fabrication and Characterization of Patterned Single-Crystal Silicon Nanolines, Nano Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32747 (Accessed April 20, 2024)
Created December 6, 2007, Updated October 12, 2021