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Displaying 151 - 175 of 759

Magnetotransport in highly enriched 28Si for quantum information processing devices

November 25, 2018
Author(s)
Aruna N. Ramanayaka, Ke Tang, Joseph Hagmann, Hyun S. Kim, Curt A. Richter, Joshua M. Pomeroy
Elimination of unpaired nuclear spins can result in low error rates for quantum computation; therefore, isotopically enriched 28Si is regarded as an ideal environment for quantum information processing devices. Using mass selected ion beam deposition

Effects of Nitrogen on the Interface Density of States Distribution in 4H-SiC Metal Oxide Semiconductor Field Effect Transistors: Super-hyperfine Interactions and Near Interface Silicon Vacancy Energy Levels

November 13, 2018
Author(s)
Mark Anders, Patrick M. Lenahan, Arthur H. Edwards, Peter A. Schultz, Renee M. Van Ginhoven
The performance of SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is greatly enhanced by a post oxidation anneal in NO. These anneals greatly improve effective channel mobilities and substantially decrease interface trap densities

Parasitic engineering for RRAM control

October 15, 2018
Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Dmitry Veksler, Jason P. Campbell, Jason T. Ryan, helmut Baumgart, Kin P. Cheung
The inevitable current overshoot which follows forming or switching of filamentary resistive random access memory (RRAM) devices is often perceived as a source of variability that should be minimized. This sentiment has resulted in efforts to curtail the

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

July 30, 2018
Author(s)
Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi-layer. The delta layer was fabricated starting from an ultra high vacuum (UHV) flash anneal of

Non-tunneling origin of the 1/f noise in SiC MOSFET

July 1, 2018
Author(s)
Kin (Charles) Cheung, Jason Campbell
Abstract: It has long been established that MOSFET random telegraph noise and the cumulative 1/f noise is the result of inversion charge tunneling in and out of bulk traps in the gate oxide near the interface. The tunneling nature is a key concept upon

A practical field guide to thermoelectrics: fundamentals, synthesis, and characterization

June 27, 2018
Author(s)
Alex Zevalkink, David M. Smiadak, Joshua Martin, Michael Chabinyc, Olivier Delaire, Jeffrey Blackburn, Andrew Ferguson, Jian Wang, Kirill Kovnir, Laura Schelhas, Stephen D. Kang, Maxwell T. Dylla, G. J. Snyder, Brenden Ortiz, Eric Toberer
The study of thermoelectric materials spans condensed matter physics, materials science and engineering, and solid-state chemistry. The diversity of the participants and the inherent complexity of the topic means that it is difficult, if not impossible, for

Improving dielectric nanoresonator array coatings for solar cells

June 19, 2018
Author(s)
Dongheon Ha, Nikolai B. Zhitenev
We introduce single layer silicon dioxide (SiO2) nanosphere arrays as antireflection coatings (ARCs) on a gallium arsenide (GaAs) solar cell. We make macro- and nanoscale experiments and finite-difference time-domain (FDTD) calculations to prove the

First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs

June 18, 2018
Author(s)
Wonil Chung, Mengwei Si, Pragya Shrestha, Jason Campbell, Kin P. Cheung, Peide Ye
In this work, ultrafast pulses with pulse widths ranging from 100 ps to seconds were applied on the gate of Ge ferroelectric (FE) nanowire (NW) pFETs with FE Hf0.5Zr0.5O2 (HZO) gate dielectric exhibiting steep subthreshold slope (SS) below 60 mV/dec bi

SiC power MOSFET gate oxide breakdown reliability Current status

May 3, 2018
Author(s)
Kin P. Cheung
SiC power MOSFET is poised to take off commercially. Gate oxide breakdown reliability is an important obstacle standing is the way. Early prediction of poor intrinsic reliability comparing to silicon MOSFET, while theoretically sound, has now proven way

Wafer-Level Electrically Detected Magnetic Resonance:Magnetic Resonance in a Probing Station

March 20, 2018
Author(s)
Duane J. McCrory, Mark Anders, Jason Ryan, Pragya Shrestha, Kin P. Cheung, Patrick M. Lenahan, Jason Campbell
We report on a novel semiconductor reliability technique that incorporates an electrically detected magnetic resonance (EDMR) spectrometer within a conventional semiconductor wafer probing station. EDMR is an ultrasensitive electron paramagnetic resonance

Glassy Phases in Organic Semiconductors

March 17, 2018
Author(s)
Chad R. Snyder, Dean M. DeLongchamp
Organic semiconductors may be processed from fluids using graphical arts printing and patterning techniques to create complex circuitry. Because organic semiconductors are weak van der Waals solids, the creation of glassy phases during processing is quite

Paper in electronic and optoelectronic devices

March 6, 2018
Author(s)
Dongheon Ha, Zhiqiang Fang, Nikolai B. Zhitenev
The demand for lightweight, cost-effective, and/or flexible electronic and optoelectronic devices drives research toward new materials advancing the desired functionality or reducing manufacturing costs. Paper, being in addition an earth abundant and

Synchrotron Methods for Flexible Hybrid Electronics Industrial Recommendations on Interagency (DoC-DoD-DoE) Partnerships to Address Measurement Challenges Hindering the Flexible Hybrid Electronics Manufacturing Ecosystem

February 12, 2018
Author(s)
Christopher L. Soles, Richard A. Vaia, Ronald Pindak
The round-table participants concluded that facilities at NSLS-II provide immediate opportunities to address some of the critical processing and measurement challenges that are blocking the path towards a sustainable US-centric Flexible Hybrid Electronic

p-type doping efficiency in CdTe: Influence of second phase formation

January 29, 2018
Author(s)
Jedidiah J. McCoy, Santosh K. Swain, David R. Diercks, Brian Gorman, Kelvin G. Lynn, John R. Sieber
Cadmium Telluride (CdTe) high purity, bulk crystals doped with phosphorus have been grown via vertical Bridgman melt growth technique to understand and improve dopant solubility and activation. Large net carrier densities have been reproducibly obtained
Displaying 151 - 175 of 759
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