Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

Published

July 30, 2018

Author(s)

Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky

Abstract

In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi-layer. The delta layer was fabricated starting from an ultra high vacuum (UHV) flash anneal of Si(100) surface, followed by physical vapor deposition of Al monolayer. To activate the Al dopants, the sample was then annealed in-situ at 550 °C for 1 min. The Si capping layer was electron-beam evaporated in-situ at room temperature, followed by an ex-situ anneal at 550 °C for 10 min to recrystallize the Si capping layer. Low temperature magnetotransport measurements yield a maximum hole mobility of 20 cm2/V/s at a carrier density 1.39 × 10^14 holes/cm2, which corresponds to ≈ (0.93 ± 0.1) holes per dopant atom. No superconductivity was observed in these devices even at T

Citation

AIP Advances

Volume

8

Pub Type

Journals

Download Paper

DOI Link

Keywords

2DHG, quantum information, semiconductor quantum information

Citation

Ramanayaka, A. , , H. , Hagmann, J. , Murray, R. , Tang, K. , Zimmerman, N. , Richter, C. , Pomeroy, J. , Meisenkothen, F. , Zhang, H. , Davydov, A. and Bendersky, L. (2018), Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures, AIP Advances, [online], https://doi.org/10.1063/1.5045338 (Accessed April 19, 2024)