Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Assessment of Carrier Lifetimes and Surface Recombination Velocity through Spectral Measurements

Published

Author(s)

John F. Roller, Behrang H. Hamadani

Abstract

Charge carrier lifetimes and surface recombination velocities were measured on photovoltaic- grade silicon wafers using a spectral-dependent method. Narrow bandwidth light emitting diodes (LEDs) were used to generate excess charge carriers inside the material. The effective lifetimes were accurately measured and then analyzed in conjunction with an analytical model relating the bulk lifetime and surface recombination velocity with effective lifetime and excitation wavelength. The agreement between the model and the measured data validates the ability to ascertain information about the bulk lifetime and surface recombination velocity through this measurement. The limitations of the model are also discussed in detail.
Proceedings Title
44th IEEE photovoltaic specialist conference
Conference Dates
June 25-30, 2017
Conference Location
Washington, DC

Keywords

Semiconductors, carrier lifetimes, surface recombination, LEDs

Citation

Roller, J. and Hamadani, B. (2018), Assessment of Carrier Lifetimes and Surface Recombination Velocity through Spectral Measurements, 44th IEEE photovoltaic specialist conference, Washington, DC, [online], https://doi.org/10.1109/PVSC.2017.8366565 (Accessed December 8, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created May 10, 2018, Updated July 24, 2020