Contactless THz-based bulk semiconductor mobility measurements using two-photon excitation
Jared K. Wahlstrand, Edwin J. Heilweil
We perform contactless mobility measurements in ZnSe, ZnTe, GaP, CdS, and GaSe in an optical pump, THz probe experiment. By using two-photon excitation, one excites the entire sample thickness to produce measurable signals at 1013 carriers/cm3 or higher densities. For ZnTe and GaSe samples, the mobility measured using two-photon excitation is higher than that measured with one-photon excitation.