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Contactless THz-based bulk semiconductor mobility measurements using two-photon excitation

Published

Author(s)

Jared K. Wahlstrand, Edwin J. Heilweil

Abstract

We perform contactless mobility measurements in ZnSe, ZnTe, GaP, CdS, and GaSe in an optical pump, THz probe experiment. By using two-photon excitation, one excites the entire sample thickness to produce measurable signals at 1013 carriers/cm3 or higher densities. For ZnTe and GaSe samples, the mobility measured using two-photon excitation is higher than that measured with one-photon excitation.
Citation
Optics Express
Volume
26
Issue
23

Keywords

bulk semiconductors, mobility, terahertz, two-photon excitation
Created October 31, 2018, Updated November 10, 2018