Ultrafast, deep-dopant diffusion in crystalline silicon by laser-induced full area surface melting
Zibo Zhou, Ivan Perez-Wurfl, Brian J. Simonds
As solar cell back contact schemes have improved in recent years, the non-ideal emitter region has become a dominant contributor to overall losses in solar cell efficiency. Our analysis shows that these losses can be greatly reduced by creating a lightly (10 µm) is measured by cross-sectional etching and electron beam- induced current measurements. Electrochemical capacitance-voltage measurements are used to measure both the depth as well as the dopant profile resulting from the laser-driven process. A simple solar cell device is created and its performance is discussed. In order to understand the causes limiting cell performance, we analyse dislocation defects induced by the large thermal gradients inherent to the laser-based process.
Journal of Solar Energy Materials and Solar Devices