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Displaying 676 - 700 of 756

Future Perspective of RF and Analog/Mixed-Signal Integrated Circuit Technologies for Mobile Communications

October 23, 2006
Author(s)
Bin Zhao, Herbert S. Bennett, Julio Costa, Peter Cottrell, Anthony A. Immorlica, Margaret Huang, Jan-Erik Mueller, Marco Racanelli, Hisashi Shichijo, Charles E. Weitzel
Radio frequency (RF) and analog/mixed-signal (AMS) integrated circuits (ICs) are key enabling components for mobile and wireless communications and their advancements continue to drive the growth of the related semiconductor market. The circuit and

RF, Analog, and Mixed Signal Technologies for Communication ICs - An ITRS Perspective

October 10, 2006
Author(s)
Margaret Huang, Herbert S. Bennett, Julio Costa, Peter Cotrell, Anthony A. Immorlica, Jan-Erik Meuller, Charles E. Weitzel, Marco Racaneli, Hisashi Schichijo, Bin Zhao
The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon-based and III-V

Electrostatically gated Si devices: Coulomb blockade and barrier capacitance

August 10, 2006
Author(s)
Neil M. Zimmerman, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi
Using a new device resembling a nano-CCD, and measuring the Coulomb blockade, we identify a new parameter, the "barrier capacitance". We then show how this parameter can be used to learn about the underlying shape of the energy barrier under a gate with a

On-Chip Electrostatic Discharge Protection for CMOS Gas Sensor Systems-on-a-Chip (SoC)

August 1, 2006
Author(s)
Javier Salcedo, Juin J. Liou, Muhammad Y. Afridi, Allen R. Hefner Jr.
An on-chip Electrostatic Discharge (ESD) protection scheme is demonstrated for MicroElectroMechanical Systems (MEMS)-based Embedded Sensor (ES) System-on-a-Chip (SoC). The ESD protection scheme is implemented with ground-referenced multifinger thyristor

Electrochemical Study of Chitosan Films Deposited on Gold Electrodes

July 28, 2006
Author(s)
Rebecca A. Zangmeister, J J. Park, G W. Rubloff, Michael J. Tarlov
We report the electrochemical characterization of chitosan films deposited on gold electrodes. Cyclic voltammetry was used to characterize the deposition and electroactivity of chitosan coated gold electrodes. Chitosan films were found to deposit at a gold

On-Wafer Noise-Parameter Measurements at NIST

July 14, 2006
Author(s)
James P. Randa, Dave K. Walker
NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. In this paper we briefly describe the measurement methods and the uncertainty analysis and present results of measurements on a very poorly matched transistor

Terahertz radiometer design for traceable noise-temperature measurements

July 14, 2006
Author(s)
Eyal Gerecht, Dazhen Gu, James P. Randa, Dave K. Walker, Robert L. Billinger
We report on design of a radiometer for traceable noise-temperature measurements at terahertz frequencies, including noise measurements on cryogenic IF components, development and test of quasi-optical adapter technology, development of black body

Reverse Noise Measurement and Use in Device Characterization

June 10, 2006
Author(s)
James P. Randa, Tom McKay, Susan L. Sweeney, Dave K. Walker, Lawrence Wagner, David R. Greenberg, Jon Tao, G. Ali Rezvani
We review the concept of reverse noise measurements in the context of on-wafer transistor noise characterization. Several different applications of reverse noise measurements are suggested and demonstrated. Reverse measurements can be used to check

Nonlinear charge transport in semiconducting polythiophene

May 23, 2006
Author(s)
Jan Obrzut
We measured the complex impedance and nonlinear conductivity for regioregular poly(3-hexylthiophene) (P3HT) by recording and analyzing AC waveforms at their fundamental frequency and at higher order harmonic frequencies. We used 50 µm thick films of P3HT

RM 8111: Development of a Prototype Linewidth Standard

May 1, 2006
Author(s)
Michael W. Cresswell, William Gutherie, R. Dixon, Richard A. Allen, Christine E. Murabito, Joaquin (. Martinez
Staff of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, in collaboration with VLSI Standards, Inc., of San Jose, California, have developed a new generation of prototype

Design and Fabrication of a Copper Test Structure as a Electrical Critical Dimension Reference

April 1, 2006
Author(s)
Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Richard A. Allen, Michael W. Cresswell
A novel copper damascene process is reported for the implementation of Electrical Critical Dimension (ECD) reference material. The method of fabrication first creates an initial 'silicon preform' whose linewidth is transfered into a trench using a silicon

Spatial Distributions of Trapping Centers in HfO2/SiO2 Stacked Dielectrics

April 1, 2006
Author(s)
Da-Wei Heh, Eric M. Vogel, J B. Bernstein, Chadwin Yang, George A. Brown, Gennadi Bersuker, Pui-Yee Hung, Alain C. Diebold
An analysis methodology basd on charge pumping (CP) measurement was applied to extract the spatial depth profile of traps in the SiO2/HfO2 gate stacks. This analysis indicates that by changing CP measurement parameters it is possible to probe traps at

Single electron tunnelling transistor with tunable barriers using silicon nanowire MOSFET

March 7, 2006
Author(s)
Akira Fujiwara, Hiroshi Inokawa, Kenji Yamazaki, Hideo Namatsu, Yasuo Takahashi, Neil M. Zimmerman, Stuart Martin
Single-electron tunnelling (SET) transistors 1 are now of great and wide interest as basic elements for future applications such as low-power nanoelecronics 2 and read-out electrometer for solid-state quantum computing 3. Silicon SET devices 4 have great

Precision Measurement Method for Cryogenic Amplifier Noise Temperatures Below 5 K

March 1, 2006
Author(s)
James P. Randa, Eyal Gerecht, Dazhen Gu, Robert L. Billinger
We report precision measurements of the effective input noise temperature of a cryogenic (liquid helium temperature) MMIC amplifier at the amplifier reference planes within the cryostat. A method is given for characterizing and removing the effect of the

Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures

February 1, 2006
Author(s)
Seong-Eun Park, Nhan V. Nguyen, Joseph J. Kopanski, John S. Suehle, Eric M. Vogel
Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in the
Displaying 676 - 700 of 756
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