Heh, D.
, Vogel, E.
, Bernstein, J.
, Yang, C.
, Brown, G.
, Bersuker, G.
, Hung, P.
and Diebold, A.
(2006),
Spatial Distributions of Trapping Centers in HfO2/SiO2 Stacked Dielectrics, IEEE Electronic letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32009
(Accessed December 10, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Spatial Distributions of Trapping Centers in HfO2/SiO2 Stacked Dielectrics
Published
Author(s)
, , J B. Bernstein, Chadwin Yang, George A. Brown, Gennadi Bersuker, Pui-Yee Hung, Alain C. Diebold
Abstract
An analysis methodology basd on charge pumping (CP) measurement was applied to extract the spatial depth profile of traps in the SiO2/HfO2 gate stacks. This analysis indicates that by changing CP measurement parameters it is possible to probe traps at different depth inside the dielectric. Spatial profile of traps reveals three separate regions of trap location: in SiO2 interface, SiO2/HfO2 interaction region, and an HfO2 film.Citation
IEEE Electronic letters
Volume
88
Issue
15
Pub Type
Journals
Download Paper
Keywords
charge pumping, HfO2, trap profile
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created March 31, 2006, Updated October 12, 2021