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Spatial Distributions of Trapping Centers in HfO2/SiO2 Stacked Dielectrics

Published

Author(s)

Da-Wei Heh, Eric M. Vogel, J B. Bernstein, Chadwin Yang, George A. Brown, Gennadi Bersuker, Pui-Yee Hung, Alain C. Diebold

Abstract

An analysis methodology basd on charge pumping (CP) measurement was applied to extract the spatial depth profile of traps in the SiO2/HfO2 gate stacks. This analysis indicates that by changing CP measurement parameters it is possible to probe traps at different depth inside the dielectric. Spatial profile of traps reveals three separate regions of trap location: in SiO2 interface, SiO2/HfO2 interaction region, and an HfO2 film.
Citation
IEEE Electronic letters
Volume
88
Issue
15

Keywords

charge pumping, HfO2, trap profile

Citation

Heh, D. , Vogel, E. , Bernstein, J. , Yang, C. , Brown, G. , Bersuker, G. , Hung, P. and Diebold, A. (2006), Spatial Distributions of Trapping Centers in HfO2/SiO2 Stacked Dielectrics, IEEE Electronic letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32009 (Accessed April 18, 2024)
Created March 31, 2006, Updated October 12, 2021