Salcedo, J.
, Liou, J.
, Afridi, M.
and Hefner, A.
(2006),
On-Chip Electrostatic Discharge Protection for CMOS Gas Sensor Systems-on-a-Chip (SoC), Microelectronics Reliability
(Accessed October 14, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
On-Chip Electrostatic Discharge Protection for CMOS Gas Sensor Systems-on-a-Chip (SoC)
Published
Author(s)
, Juin J. Liou, ,
Abstract
An on-chip Electrostatic Discharge (ESD) protection scheme is demonstrated for MicroElectroMechanical Systems (MEMS)-based Embedded Sensor (ES) System-on-a-Chip (SoC). The ESD protection scheme is implemented with ground-referenced multifinger thyristor-type devices optimized for 1) the Input/Output (I/O) protection, 2) the power supply clamp, and 3) the protection at the internal sensors? electrodes during the micromachining process. The ESD protection structure shows a low leakage current in the order of 10-11 Amps at the SoC operating voltage, and high on-state conductance I-V characteristics for bipolar ESD protection.Citation
Microelectronics Reliability
Volume
46
Issue
8
Pub Type
Journals
Keywords
Electrostatic Discharge (ESD), Gas Sensor System on-a-Chip (SoC), MicroElectroMechanical Systems (MEMS), Thyristor.
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created August 1, 2006, Updated January 27, 2020