Zimmerman, N.
, Fujiwara, A.
, Inokawa, H.
and Takahashi, Y.
(2006),
Electrostatically gated Si devices: Coulomb blockade and barrier capacitance, Applied Physics Letters, [online], https://doi.org/10.1063/1.2240600
(Accessed May 4, 2024)
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Electrostatically gated Si devices: Coulomb blockade and barrier capacitance
Published
Author(s)
, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi
Abstract
Using a new device resembling a nano-CCD, and measuring the Coulomb blockade, we identify a new parameter, the "barrier capacitance". We then show how this parameter can be used to learn about the underlying shape of the energy barrier under a gate with a size of a few tens of nm. We observe Coulomb blockade in a device without energy barriers, where the conduction is via diffusive transport; we speculate on the cause of this observation.Citation
Applied Physics Letters
Volume
89
Issue
052102-1
Pub Type
Journals
Download Paper
Keywords
barrier capacitance, si, single-electron tunneling
Citation
Created August 10, 2006, Updated January 27, 2020