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Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope

Published

Author(s)

Joseph Kopanski, W. R. Thurber, Melissa Chun

Abstract

The scanning capacitance microscope (SCM) was used to characterize the capacitance-voltage (C-V) properties of silicon dioxide (SiO2) on silicon (Si). The operational mechanism of the SCM and its potential for non-destructive, contactless characterization of dielectric films on semiconductors are described. Theoretical predictions are made of SCM-measured differential capacitance versus dc bias voltage ( Δ}C-V) curves for metal-oxide-semiconductor (MOS) capacitors with various levels of fixed and interface traps. To better understand SCM (contactless) Δ}C-V measurements, a study was conducted using the SCM to measure the Δ}C-V properties of MOS capacitors with deposited metal contacts with areas ranging from 1 υm2 to 40000 υm2. As an example application, SCM measurements of the Δ}C-V properties of low-temperature ozone-enhanced oxides on silicon are presented. Ozone-enhanced oxides with thicknesses greater than 3 nm were found to produce MOS like Δ}CΔ}V curves with interface trap densities sufficiently low to be useful for samples for dopant profile extraction.
Citation
Interfaces in Electronic Materials
Publisher Info
Electrochemical Society, Pennington, NJ

Keywords

C-V, Capacitance-voltage characterization, interface traps, oxide fixed charge, oxide quality, ozone-enhanced oxidation, scanning capacitance microscope, SCM

Citation

Kopanski, J. , Thurber, W. and Chun, M. (2006), Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope, Electrochemical Society, Pennington, NJ (Accessed May 26, 2024)

Issues

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Created June 30, 2006, Updated October 12, 2021