RF, Analog, and Mixed Signal Technologies for Communication ICs - An ITRS Perspective

Published

October 10, 2006

Author(s)

Margaret Huang, Herbert S. Bennett, Julio Costa, Peter Cotrell, Anthony A. Immorlica, Jan-Erik Meuller, Charles E. Weitzel, Marco Racaneli, Hisashi Schichijo, Bin Zhao

Abstract

The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon-based and III-V compound semiconductor. In this paper, we will discuss the roadmap and the figures of merit (FoM) used to characterize both active and passive devices critical for typical radio front end designs. We will review the trends, challenges and potential solutions and address the intersection of silicon-based and III-V compound semiconductors.

Proceedings Title

Proceedings of the 2006 IEEE Bipolar / BiCMOS Circuits and Technology Meeting (BCTM2006)

Conference Dates

October 8, 2006-October 10, 1992

Conference Location

Maastricht, 1, NL

Conference Title

2006 IEEE Bipolar / BiCMOS Circuits and Technology Meeting (BCTM2006)

Pub Type

Conferences

Citation

Huang, M. , Bennett, H. , Costa, J. , Cotrell, P. , Immorlica, A. , Meuller, J. , Weitzel, C. , Racaneli, M. , Schichijo, H. and Zhao, B. (2006), RF, Analog, and Mixed Signal Technologies for Communication ICs - An ITRS Perspective, Proceedings of the 2006 IEEE Bipolar / BiCMOS Circuits and Technology Meeting (BCTM2006), Maastricht, 1, NL (Accessed December 13, 2024)