Spatial Probing of Traps in nMOSFET with ALD HfO2/SiO2 Stacks Using Low Frequency Noise Characteristics

Published

October 15, 2006

Author(s)

Hao Xiong, John S. Suehle

Abstract

Low frequency (LF) noise is studied in nMOSFET with various HfO2 dielectric or interfacial layer (IL) thickness and TiN as gate electrode material. LF noise increases with HfO2 thickness, and decreases with IL SiO2 thickness. Traps at the channel and dielectric interface do not contribute to the LF noise or cannot be resolved from thermal noise. The LF noise correlates well with the hysteresis or Vth instability in DC measurement. Volume trap density calculated from LF noise analysis is more than one level of magnitude higher in 7 nm HfO2 than in 3 nm HfO2 devices. Qualitative trap spatial profile can be obtained from the LF spectra, and the stress induced redistribution of trap distribution is discussed.

Proceedings Title

IEEE International Integrated Reliability Workshop Final Report

Conference Dates

October 16-19, 2006

Conference Location

Fallen Leaf, CA, USA

Conference Title

IEEE International Integrated Reliability Workshop

Pub Type

Conferences

Keywords

1/f noise, border trap, charge pumping, High-k gate dielectrics, metal gate, MOSFETs

Citation

Xiong, H. and Suehle, J. (2006), Spatial Probing of Traps in nMOSFET with ALD HfO2/SiO2 Stacks Using Low Frequency Noise Characteristics, IEEE International Integrated Reliability Workshop Final Report, Fallen Leaf, CA, USA (Accessed December 13, 2024)