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NIST Authors in Bold

Displaying 451 - 475 of 757

A current-density scale for characterizing nonlinearity in high-Tc superconductors

June 1, 2005
Author(s)
Kenneth Leong, James C. Booth, Susan A. Schima
In this paper, we characterize microwave nonlinearity in a high temperature superconducting (HTS) thin film sample by measurement of a geometry-independent current-density scale j o. This quanity j specifies the strenth of a material-dependent nonlinearity

Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices

April 4, 2005
Author(s)
Allen R. Hefner Jr., David W. Berning, Colleen E. Hood
Performance metrics and test instrumentation needs for emerging high-voltage, high-speed SiC power devices are described. Unique power device and package thermal measurement test systems and parameter extraction methods are introduced, and applied to

The OATS Method Revisited

April 1, 2005
Author(s)
Christopher L. Holloway, Perry F. Wilson, Robert German
Open area test sites (OATS) or equivalent semi-anechoic chambers are the most commonly used sites for EMC emissions tests. This article discusses the origins of this test methodology and revisits the interference problem (broadcast media) that the OATS

Electric Current Induced Thermomechanical Fatigue Testing of Interconnects

March 1, 2005
Author(s)
Robert Keller, Roy H. Geiss, Yi-Wen Cheng, David T. Read
We demonstrate the use of electrical methods for evaluating the thermomechanical fatigue properties of patterned aluminum and copper interconnects on silicon-based substrates. Through a careful selection of alternating current frequency and current density

Microstructure Evolution during Alternating-Current-lnduced Fatigue

November 1, 2004
Author(s)
Robert Keller, Roy H. Geiss, Yi-Wen Cheng, David T. Read
Subjecting electronic interconnect lines to high-density, low.frequency alternating current creates cyclic thermomechanical stresses that eventually cause electrical failure. A detailed understanding of the failure process could contribute to both

Multiport Investigation of the Coupling of High-Impedance Probes

November 1, 2004
Author(s)
Dylan F. Williams, Pavel Kabos, Uwe Arz
We used an on-wafer measurement technique that combines two- and three-port frequency-domain mismatch corrections in order to characterize the influence of a high-impedance probe on a device under test. The procedure quantifies the probe’s load of the

Spin transfer switching of spin valve nanopillars using nanosecond pulsed currents

October 29, 2004
Author(s)
Shehzaad F. Kaka, Matthew Pufall, William Rippard, Thomas J. Silva, Stephen E. Russek, Jordan A. Katine, Matt Carey
Spin valve nanopillars are reversed via the mechanism of spin momentum transfer using current pulses applied perpendicular to the film plane of the device. The applied pulses were varied in amplitude from 1.8 to 7.8 mA, and varied in duration within the

Electrostatic Discharge Protection For Embedded-Sensor Systems-On-a-Chip

October 8, 2004
Author(s)
Javier A. Salcedo, Juin J. Liou, Muhammad Afridi, Allen R. Hefner Jr., Ankush Varma
The robustness of Embedded-Sensor (ES) System-on-a-Chip (SoC) applications involves several design constrains that require a unique assessment. For example, space-efficient electrostatic discharge protection (ESD) must be provided to protect the CMOS

Compact Models for Silicon Carbide Power Devices

October 1, 2004
Author(s)
Ty R. McNutt, Allen R. Hefner Jr., Alan Mantooth, David W. Berning, Ranbir Singh
The development of compact silicon carbide (SiC) power semiconductor device models for circuit simulation is described. The work detailed herein has been used to model power Schottky, Merged-PiN-Schottky, PiN diode, and MOSFET models. In these models, the

Electrical material property measurements using a free-field, ultra-wideband system

October 1, 2004
Author(s)
Chriss A. Grosvenor, Robert T. Johnk, David R. Novotny, Seturnino Canales, James R. Baker-Jarvis, Michael D. Janezic, Jim L. Drewniak, Marina Kolednitseva, Jianmin Zhang, Poornachander Rawa
Abstract: Nondestructive measurements of materials using TEM horn antennas and an ultra-wideband measurement system are presented. Time-domain gating and genetic algorithms are used to process the data and extract the dielectric properties of the material

Lumped-Parameter Thermal Modeling of an IPEM using Thermal Component Models

August 15, 2004
Author(s)
J J. Rodriguez, Allen R. Hefner Jr., David W. Berning, M Velez-Reyes, Madelaine H. Hernandez, Jorge Gonz?lez
A thermal model for the CPES IPEM Gen. II is presented. The selected approach is the simulation of the thermal behavior of an experimental IPEM testbed using the 1D finite difference method. An equivalent electrical network representation of the thermal

TEM horn antennas: A promising new technology for compliance testing

August 1, 2004
Author(s)
Chriss A. Grosvenor, Robert T. Johnk, David R. Novotny, Seturnino Canales
Abstract-This paper discusses the advantages of using a TEM-horn antenna over conventional EMC antennas such as the log-periodic, hybrids, or biconical antennas. Important issues such as frequency coverage, linearity, time-resolution of events, cost, and

Mems-Based Embedded Sensor Virtual Components for SOC

June 24, 2004
Author(s)
Muhammad Afridi, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, Ankush Varma, Bruce Jacob, Stephen Semancik
The design and implementation of a monolithic MEMS-based (Micro Electro Mechanical Systems) gas sensor virtual component is described. A bulk micromachining technique is used to create suspended microhotplate structures. The thermal properties of the

Reliability of SiC MOS Devices

June 24, 2004
Author(s)
Ranbir Singh, Allen R. Hefner Jr.
Fundamental limitations to oxide reliability are analyzed in silicon carbide based devices. A barrier height primarily determined by band offsets between metal/SiC and the dielectric, and the electric field in the dielectric results in tunneling current

Checks of Amplifier Noise-Parameter Measurements

June 11, 2004
Author(s)
James P. Randa, Dave K. Walker
We propose two verification methods for measurements of noise parameters of amplifiers, particularly low-noise amplifiers (LNAs). One method is a direct measurement of the parameter Trev, the noise temperature from the amplifier input, and the comparison

Radiometer Measurements of a Near-Ambient, Variable-Temperature Noise Standard

June 7, 2004
Author(s)
George Free, James P. Randa, Robert L. Billinger
A near-ambient, variable-temperature noise standard whose physical temperature can be accurately measured was constructed and then measured with the NIST total-power radiometer to test the accuracy of radiometer measurements in the temperature range of 263

Practical electron-tunneling refrigerator

January 21, 2004
Author(s)
Anna Clark, Anthony Williams, Steve Ruggiero, Marcel L. van den Berg, Joel N. Ullom
We demonstrate a thin-film, solid-state refrigerator based on the removal of hot electrons from a metal by quantum-mechanical tunneling. We have halved the electronic temperature in a macroscopic film from 260 mK to near 130 mK. Both the cooling power and

Dilute Al-Mn alloys for superconductor device applications

December 17, 2003
Author(s)
Steve Ruggiero, Anthony Williams, W. H. Rippard, A. Clarke, Steven Deiker, Leila R. Vale, Joel N. Ullom
We discuss results on the superconducting and electron-transport properties of Mn doped Al produced by sputter deposition. The critical temperature of Al has been systematically reduced to below 50 mK by doping with 1000-3000 ppm Mn. Values of the α
Displaying 451 - 475 of 757
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