Characterization of Normally-off SiC Vertical JFET Devices and Inverter Circuits
Jih-Sheng Lai, H. Yu, J. Zhang, Y. Li, Kuang Sheng, J.H. Zhao, Allen R. Hefner Jr.
A normally-off SiC JFETs has been characterized under static and dynamic operating conditions. Two application oriented inverter circuits were constructed for additional tests under soft- and hard-switching conditions. The single-phase soft-switching inverter was operating at 100 kHz, and the three-phase hard-switching inverter was operating at 15 kHz. The unique feature of the inverter operating in synchronous rectification mode has been observed. Thus the new generation SiC VJFET device allows high-efficiency inverter operation with reduction of the conduction loss by synchronous rectification and the reduction of switching loss with soft switching.
, Yu, H.
, Zhang, J.
, Li, Y.
, Sheng, K.
, Zhao, J.
and Hefner Jr., A.
Characterization of Normally-off SiC Vertical JFET Devices and Inverter Circuits, IEEE Transactions on Industry Applications, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32300
(Accessed September 22, 2023)