Lai, J.
, Yu, H.
, Zhang, J.
, Li, Y.
, Sheng, K.
, Zhao, J.
and Hefner Jr., A.
(2005),
Characterization of Normally-off SiC Vertical JFET Devices and Inverter Circuits, IEEE Transactions on Industry Applications, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32300
(Accessed October 16, 2025)
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Characterization of Normally-off SiC Vertical JFET Devices and Inverter Circuits
Published
Author(s)
Jih-Sheng Lai, H. Yu, J. Zhang, Y. Li, Kuang Sheng, J.H. Zhao,
Abstract
A normally-off SiC JFETs has been characterized under static and dynamic operating conditions. Two application oriented inverter circuits were constructed for additional tests under soft- and hard-switching conditions. The single-phase soft-switching inverter was operating at 100 kHz, and the three-phase hard-switching inverter was operating at 15 kHz. The unique feature of the inverter operating in synchronous rectification mode has been observed. Thus the new generation SiC VJFET device allows high-efficiency inverter operation with reduction of the conduction loss by synchronous rectification and the reduction of switching loss with soft switching.Citation
IEEE Transactions on Industry Applications
Pub Type
Journals
Download Paper
Keywords
normally-off JFET, Silicon-Carbide, soft-switching, synchronous rectification
Citation
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Created September 30, 2005, Updated October 12, 2021